OKA Mauricio | Department of Electronic Engineering, Faculty of Engineering, Tohoku University
スポンサーリンク
概要
関連著者
-
Nakada A
Vlsi Design And Education Center The University Of Tokyo
-
Ohmi Tadahiro
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
-
NAKADA Akira
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
-
OKA Mauricio
Department of Electronic Engineering, Faculty of Engineering, Tohoku University
-
TAMAI Yukio
Department of Electronic Engineering, Faculty of Engineering, Tohoku University
-
Oka Maurichio
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
-
Ohmi Tadahiro
Department Of Electronic Engineering
-
Tamai Yukio
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
-
SHIBATA Tadashi
Department of Physics,Faculty of Science,Osaka University
-
Shibata Tadashi
Department Of Information And Communication Engineering The University Of Tokyo
-
Shibata T
Department Of Information And Communication Engineering The University Of Tokyo
-
AHARONI Herzl
Department of Electronic Engineering, Faculty of Engineering, Tohoku University
-
Shibata Tadashi
Department Of Electrical Engineering And Information Systems School Of Engineering The University Of
-
Aharoni Herzl
東北大学未来科学技術共同研究センター
-
Shibata T
Ntt Photonics Laboratories Ntt Corporation:(present Address)ntt Science And Core Technology Group Nt
-
Aharoni Herzl
Department of Electrical and Computer Engineering, Ben Gurion University of the Negev, Beer-Sheva 84105, Israel
-
Shibata Tadashi
Department of Electrical Engineering and Information System, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
-
Shibata T
Univ. Tokyo Tokyo Jpn
-
KANEMOTO Kei
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
-
Kanemoto Kei
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
著作論文
- A Comparative Examination of Ion Implanted n^+p Junctions Annealed at 1000℃ and 450℃
- Formation of Ultra-Shallow and Low-Leakage p^+n Junctions by Low-Temperature Post-Implantation Annealing
- Effect of Substrate Boron Concentration on the Integrity of 450℃-Annealed Ion-Implanted Junctions