A Comparative Examination of Ion Implanted n^+p Junctions Annealed at 1000℃ and 450℃
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1996-09-01
著者
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SHIBATA Tadashi
Department of Physics,Faculty of Science,Osaka University
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Shibata Tadashi
Department Of Information And Communication Engineering The University Of Tokyo
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Nakada A
Vlsi Design And Education Center The University Of Tokyo
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Shibata T
Department Of Information And Communication Engineering The University Of Tokyo
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Ohmi Tadahiro
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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NAKADA Akira
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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AHARONI Herzl
Department of Electronic Engineering, Faculty of Engineering, Tohoku University
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OKA Mauricio
Department of Electronic Engineering, Faculty of Engineering, Tohoku University
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TAMAI Yukio
Department of Electronic Engineering, Faculty of Engineering, Tohoku University
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Shibata Tadashi
Department Of Electrical Engineering And Information Systems School Of Engineering The University Of
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Aharoni Herzl
東北大学未来科学技術共同研究センター
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Oka Maurichio
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Ohmi Tadahiro
Department Of Electronic Engineering
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Tamai Yukio
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Shibata T
Ntt Photonics Laboratories Ntt Corporation:(present Address)ntt Science And Core Technology Group Nt
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Aharoni Herzl
Department of Electrical and Computer Engineering, Ben Gurion University of the Negev, Beer-Sheva 84105, Israel
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Shibata Tadashi
Department of Electrical Engineering and Information System, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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