Enhancement of Silicon Epitaxy by Increased Phosphorus Concentration in a Low-Energy Ion Bombardment Process
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概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 1998-06-01
著者
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Ohmi Tadahiro
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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Ohmi T
Tohoku Univ. Sendai Jpn
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INO Kazuhide
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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Shindo Wataru
Department of Electronic Engineering, Faculty of Engineering, Tohoku University
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KUMAMI Hajime
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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