INO Kazuhide | Department of Electronic Engineering, Graduate School of Engineering, Tohoku University

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概要

• INO Kazuhideの詳細を見る
• 同名の論文著者
• Department of Electronic Engineering, Graduate School of Engineering, Tohoku Universityの論文著者

関連著者

• Ohmi Tadahiro

  Department Of Electronic Engineering Graduate School Of Engineering Tohoku University

• INO Kazuhide

  Department of Electronic Engineering, Graduate School of Engineering, Tohoku University

• Ohmi Tadahiro

  Department Of Electronic Engineering

• Ino Kazuhide

  Department Of Electronic Engineering Faculty Of Engineering Tohoku University

• 大見 忠弘

  東北大学未来科学技術共同研究センター

• TANIGUCHI Yoshiyuki

  Department of Electronic Engineering, Graduate School of Engineering, Tohoku University

• Taniguchi Yoshio

  Department Of Functional Polymer Science Faculty Of Textile Science And Technology Shinshu Universit

• Taniguchi Yoshio

  Advanced Research Laboratory Hitachi Ltd.

• Ino Kazuhide

  Department Of Electronic Engineering Graduate School Of Engineering Tohoku University:laboratory For

• Taniguchi Yoshiyuki

  Department of Chemistry, Kyushu University 33

• ICHIKAWA Akihiro

  Departments of Nuclear Medicine, Gunma University School of Medicine

• Ichikawa Akihiro

  Department Of Electronic Engineering Tohoku University:laboratory For Microelectrontics Research Ins

• Ohmi T

  Tohoku Univ. Sendai Jpn

• Shindo Wataru

  Department of Electronic Engineering, Faculty of Engineering, Tohoku University

• Ohmi Tadahiro

  Department Of Electronic Engineering Tohoku University:laboratory For Microelectrontics Research Ins

• Ino Kazuhide

  Department Of Electronic Engineering Tohoku University:laboratory For Microelectrontics Research Ins

• KUMAMI Hajime

  Department of Electronic Engineering, Graduate School of Engineering, Tohoku University

• NATORI Iwao

  Department of Electronic Engineering, Tohoku University

• Natori Iwao

  Department Of Electronic Engineering Tohoku University:laboratory For Microelectrontics Research Ins

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著作論文

• Formation of Ultra-Shallow and Low-Reverse-Bias-Current Tantalum-Silicided Junctions Using a Si-Eneapsulated Silicidation Technique and Low-Temperature Furnace Annealing below 550℃
• Formation of Ultra-Shallow, Low-Leakage and Low-Contact-Resistance Junctions by Low-Temperature Si-Encapsulated Silicidation Process
• Enhancement of Silicon Epitaxy by Increased Phosphorus Concentration in a Low-Energy Ion Bombardment Process
• In Situ Chamber Cleaning Using Halogenated-Gas Plasmas Evaluated by Plasma-Parameter Extraction
• Modeling and Analysis of RF Plasma Using Electrical Equivalent Circuit

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