Taniguchi Yoshiyuki | Department of Chemistry, Kyushu University 33

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• Taniguchi Yoshiyukiの詳細を見る
• 同名の論文著者
• Department of Chemistry, Kyushu University 33の論文著者

関連著者

• TANIGUCHI Yoshiyuki

  Department of Electronic Engineering, Graduate School of Engineering, Tohoku University

• Taniguchi Yoshiyuki

  Department of Chemistry, Kyushu University 33

• Ohmi Tadahiro

  Department Of Electronic Engineering

• Ino Kazuhide

  Department Of Electronic Engineering Faculty Of Engineering Tohoku University

• 大見 忠弘

  東北大学未来科学技術共同研究センター

• Ohmi Tadahiro

  Department Of Electronic Engineering Graduate School Of Engineering Tohoku University

• INO Kazuhide

  Department of Electronic Engineering, Graduate School of Engineering, Tohoku University

• Taniguchi Yoshio

  Department Of Functional Polymer Science Faculty Of Textile Science And Technology Shinshu Universit

• Taniguchi Yoshio

  Advanced Research Laboratory Hitachi Ltd.

• Ino Kazuhide

  Department Of Electronic Engineering Graduate School Of Engineering Tohoku University:laboratory For

• Yamaguchi Masaru

  Department Of Chemistry Faculty Of Science Kyushu University

• Ohmi Tadahiro

  Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 05 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan

• Ino Kazuhide

  Department of Electronic Engineering, Graduate School of Engineering, Tohoku University, 05 Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Japan

• Inanaga Junji

  Department of Chemistry, Faculty of Science, Kyushu University

• Inanaga Junji

  Department of Chemistry, Kyushu University 33

• Yamaguchi Masaru

  Department of Chemistry, Kyushu University 33

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著作論文

• Formation of Ultra-Shallow and Low-Reverse-Bias-Current Tantalum-Silicided Junctions Using a Si-Eneapsulated Silicidation Technique and Low-Temperature Furnace Annealing below 550℃
• Formation of Ultra-Shallow, Low-Leakage and Low-Contact-Resistance Junctions by Low-Temperature Si-Encapsulated Silicidation Process
• Formation of Ultra-Shallow and Low-Reverse-Bias-Current Tantalum-Silicided Junctions Using a Si-Encapsulated Silicidation Technique and Low-Temperature Furnace Annealing below 550°C
• Use of 1,8-diazabicyclo(5.4.0)undec-7-ene in preparation of trimethylsilyl enol ethers and trimethylsilylacetylenes.

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