Dependence of Gas Chemistry on Si Surface Reactions in High C/F Ratio Fluorocarbon Plasma during Contact Hole Etching
スポンサーリンク
概要
- 論文の詳細を見る
- 1997-09-16
著者
-
和田 智史
東京工業大学大学院理工学研究科材料工学専攻
-
Ohmi Tadahiro
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
-
Wada Satoshi
Department Of Physics Graduate School Of Science Tokyo University Of Science
-
Ohmi Tadahiro
Department Of Electronic Engineering
-
Ueda T
Process Development Center Sharp Corporation
-
KOMEDA Hiroyuki
Department of Electronic Engineering, Tohoku University
-
UEDA Tohru
Process development Center, Sharp Corporation
-
WADA Sakae
Process development Center, Sharp Corporation
-
Komeda Hiroyuki
Department Of Electronic Engineering Tohoku University
関連論文
- エンジニアード・ドメイン構造を導入した強誘電体単結晶における巨大圧電効果
- 圧電単結晶の巨大圧電効果とドメイン構造 (特集 巨大機能物性を生むセラミックス)
- 27pYA-6 チタン酸バリウムナノ粒子の相転移と表面構造(27pYA 誘電体,領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
- 20aYM-7 チタン酸バリウムナノ粒子における相転移挙動(誘電体,領域10(誘電体,格子欠陥,X線・粒子線,フォノン物性))
- 25p-A-1 キュリー温度前後での単分域チタン酸バリウム単結晶のラマン散乱測定
- 20pXA-1 チタン酸バリウム微粒子における粒子構造とサイズ効果(誘電体(BaTiO_3系・SrTiO_3系),領域10,誘導体,格子欠陥,X線・粒子線,フォノン物性)
- 20pXA-2 テンプレート粒子成長法による[110]配向チタン酸バリウムセラミックスの作製とその圧電特性(誘電体(BaTiO_3系・SrTiO_3系),領域10,誘導体,格子欠陥,X線・粒子線,フォノン物性)
- 赤外反射測定法を用いたTHz領域におけるBaTiO3誘電体粒子の誘電特性評価
- Effects of Stimulus Waveform on Magnetic Nerve Stimulation
- High-Performance Stimulating Coils and Eddy Currents in Magnetic Heart Stimulation
- チタン酸バリウム微粒子のサイズ効果に及ぼす格子欠陥の役割 : 新しいモデル
- 水熱法によるチタン酸バリウム微粒子の合成とそのキャラクタリゼーション
- 球状Al_2O_3粒子を分散した水酸アパタイトセラミックス
- SiC板状粒子を分散した水酸アパタイト粉体の焼結
- 26aYE-12 チタン酸バリウムの微粒子特性に関する理論的考察(誘電体(BaTiO_3関連),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
- 強誘電体結晶の異方性を利用したエンジニアード・ドメイン構造 (特集 異方性工学のすすめ(1)構造と異方性)
- ドメイン構造制御による巨大圧電特性の発現--エンジニアード・ドメイン構造と圧電特性向上のメカニズム
- Minimization of BF^+_2-Implantation Dose to Reduce the Annealing Time for Ultra-Shallow Source/Drain Junction Formation below 600℃
- Reduction of BF2+-Implantation Dose to Minimize the Annealing Time for Ultra-Shallow Source/Drain Junction Formation below 600℃
- A Comparative Examination of Ion Implanted n^+p Junctions Annealed at 1000℃ and 450℃
- Formation of Ultra-Shallow and Low-Leakage p^+n Junctions by Low-Temperature Post-Implantation Annealing
- Effect of Substrate Boron Concentration on the Integrity of 450℃-Annealed Ion-Implanted Junctions
- Reducing Reverse-Bias Current in 450℃-Annealed n^+p Junction by Hydrogern Radical Sintering
- チタン酸ストロンチウム-チタン酸ジルコニウム固溶体の超広帯域誘電スペクトロスコピー
- 22aTD-11 ペロブスカイト型酸化物ナノキューブの合成とその構造評価(格子欠陥・ナノ構造(炭素・ナノ構造),領域10,誘電体,格子欠陥,X線・粒子線,フォノン物性)
- マンガンを添加した非鉛セラミックス(K,Na,Li) (Nb,Ta,Sb)O_3の圧電特性
- 強誘電体ナノ粒子 : 強誘電体ナノ粒子における複合構造と巨大誘電特性の発現
- 圧電・超音波材料 非鉛系圧電材料におけるドメインエンジニアリングの新展開
- 圧電・電歪材料--ナノ構造制御によるアクチュエータ材料の革新 (特集 マルチフェロイクス材料・デバイス研究開発への新展開)
- ドメイン制御による非鉛系圧電体結晶の性能向上
- リラクサー誘電体
- 26pYH-15 MBE法で作製したbeta-FeSi_2薄膜の光吸収係数(高密度励起現象・量子井戸・格子振動・表面,領域5(光物性))
- 圧電・超音波材料 非鉛系圧電材料における現状と将来像
- 強誘電体単結晶における新しいドメイン構造 制御としてのエンジニアード・ドメイン構造 (特集 強誘電体におけるドメインエンジニアリングの最新動向)
- 29pYR-5 リラクサー強誘電体単結晶におけるドメインエンジニアリング
- 解説 積層セラミックスキャパシターのアクチュエータ特性
- 改良低温直接合成法を用いたナノメーターオーダーチタン酸バリウム単結晶粒子の合成とそのキャラクタリゼーション
- Neuron MOS Analog/Digital Merged Circuit Technology For Center-Of-Mass Tracker Circuit
- Broadly Tunable UV-Blue Picosecond Pulsed Laser and Its Application for Biological Imaging
- Ultra-Low-Temperature Formation of Si Nitride Film by Direct Nitridation Employing High-Density and Low-Energy Ion Bombardment
- Silicon Wafer Orientation Dependence of Metal Oxide Sermiconductor Device Reliability
- 誘電体材料における格子振動測定とその解析手法--セラミックスから微粒子まで (特集 マイクロ波・ミリ波誘電体)
- 電子セラミックスの最先端研究動向と将来展望
- Preparation and evaluation of microwave dielectric ceramic thick films by aerosol deposition process(Global Innovation in Advanced Ceramics)
- Optical constants of beta-FeSi_2 film on Si substrate obtained from transmittance and reflectance data and origin of Urbach-tail
- High frequency dielectric mapping using un-contact probe for dielectric materials
- Ultra Low-Temperature Growth of High-Integrity Thin Gate Oxide Films by Low-Energy Ion-Assisted Oxidation
- Enhanced Piezoelectric Property of Barium Titanate Single Crystals with Engineered Domain Configurations
- Change of Macroscopic and Microscopic Symmetry of Barium Titanate Single Crystal around Curie Temperature
- Preoxide-Controlled Oxidation for Very Thin Oxide Films
- Native Oxide Growth on Silicon Surface in Ultrapure Water and Hydrogen Peroxide
- Dopant-Free Channel Transistor with Punchthrough Control Region under Source and Drain
- Formation of Ultra-Shallow and Low-Reverse-Bias-Current Tantalum-Silicided Junctions Using a Si-Eneapsulated Silicidation Technique and Low-Temperature Furnace Annealing below 550℃
- Formation of Ultra-Shallow, Low-Leakage and Low-Contact-Resistance Junctions by Low-Temperature Si-Encapsulated Silicidation Process
- Design of Radial Line Slot Antennas at 8.3 GHz for Large Area Uniform Plasma Generation
- Abrupt and Arbitrary Profile Formation in Silicon Using a Low-Kinetic-Energy Ion Bombardment Process
- Impact of High-Precision RF-Plasma Control on Very-Low-Temperature Silicon Epitaxy
- Direct Imaging of Thermodynamic Process In Atom Migration by Using Scanning Tunneling Microscopy
- Reduced Density of Missing-Dimer Vacancies on Tungsten-Contaminated Si (100)-(2×n) Surface by Hydrogen Termination
- Control of Surface Current on a Si(111) Surface by Using Nanofabrication
- Theoretical Study of Ga Adsorbates around Dangling-Bond Wires on am H-Terminated Si Surface: Possibility of Atomic-Scale Ferromagnets
- Initial Stage of Molecular Adsorption on Si(100) and H-terminated Si(100) Investigated by UHV-STM(STM-Si(001))
- Scanning Tunneling Spectroscopy of Dangling-Bond Wires Fabricated on the Si(100) -2 × 1 -H Surface
- Property Change of Si(111) Surface by Scanning Tunneling Microscope Manipulation
- Synthesis of Diamond by DC Plasrna Chemical Vapor Deposition above the Surface of a Water-Ethylene Glycol Solution
- 酸化スズガスセンサ膜の微構造およびホ-ル効果の膜厚依存
- The Effect of the Particle Sizes and the Correlational Sizes of Dipoles Introduced by the Lattice Defects on the Crystal Structure of Barium Titanate Fine Particles
- Ferroelectric and Pyroelectric Properties of Ba_Pb_x Ti_(Hf_,Zr_)_O_3 Thin Films : Electrical Properties of Condensed Matter
- Enhanced Piezoelectric Properties of Piezoelectric Single Crystals by Domain Engineering
- Improvement of Rinsing Efficiency after Sulfuric Acid Hydrogen Peroxide Mixture (H_2SO_4/H_2O_2) by HF Addition
- Characterization and Control of Native Oxide on Silicon
- Low Power Neuron-MOS Technology for High-Functionality Logic Gate Synthesis (Special Issue on New Concept Device and Novel Architecture LSIs)
- A Model for the Electrochemical Deposition and Removal of Metallic Impurities on Si Surfaces (Special Issue on Scientific ULSI Manufacturing Technology)
- Flexible Processor Based on Full-Adder/D-Flip-Flop Merged Module (FDMM)
- Enhancement of Silicon Epitaxy by Increased Phosphorus Concentration in a Low-Energy Ion Bombardment Process
- Difference-Frequency Generation in MgO-Doped Periodically Poled LiNbO_3 Using an Electronically Tuned Ti:Sapphire Laser in Dual-Wavelength Operation
- Intracavity Difference Frequency Generation Using Dual-wavelength Oscillation by an Electronically Tuned Ti:Sapphire Laser
- Minimizing Wafer Surface Damage and Chamber Material Contamination in New Plasma Processing Equipment
- Planar-Type Gunn Diode of InP
- Development of Scanning μ-RHEED Microscopy for Imaging Polycrystal Grain Structure in LSI (SOLID STATE DEVICES AND MATERIALS 1)
- Micropatterning of Quartz Substrates by Multi-Wavelength Vacuum-Ultraviolet Laser Ablation
- Very-Low-Temperature Epitaxial Silicon Growth By Low-Kinetic-Energy Particle Bombardment : Silicon Devices and Process Technologies(Solid State Devices and Materials 1)
- Hot-Carrier-Immunity Degradation in Metal Oxide Semiconductor Field Effect Transistors Caused by Ion-Bombardment Processes
- Effect of Preoxide on the Structure of Thernmal Oxide
- Native Oxide Growing Behavior on Si Crystal Structure and Resistivity
- Vacuum-ultraviolet laser induced surface modification of fused quartz
- VUV-UV Multiwavelength Laser-Induced Formation of Microstructure
- Ablation of Fused Quartz by Ultraviolet, Visible or Infrared Laser Coupled with VUV Laser
- The Nature of Metallic Contamination on Various Silicon Substrates
- 1kHz 全固体電子制御 Ti : sapphire レーザーによる狭帯域ピコ秒パルス発生
- Wavelength Stabilization of Dual-Wavelength Oscillation in Electronically Tuned Ti:Al2O3 Laser
- DEVELOPMENT OF EYE-SAFE 2-MICRON LASER FOR REMOTE-SENSING
- Domain Switching Kinetics of Lead Zirconate Titinate Thin Films
- Study of Initial Stage of Molecular Adsorption on Si(100) by Scanning Tunneling Microscopy
- Development of an In-Situ Method of Fabricating Artificial Atom Structures on the Si(100) Surface
- Interaction of Ga Adsorbates with Dangling Bonds on the Hydrogen Terminated Si(100) Surface
- Gas Chemistry Dependence of Si Surface Reactions in a Fluorocarbon Plasma during Contact Hole Etching
- Dependence of Gas Chemistry on Si Surface Reactions in High C/F Ratio Fluorocarbon Plasma during Contact Hole Etching
- ガス中蒸発法による極端に多孔質な酸化スズ膜の作製
- Poling Treatment and Piezoelectric Properties of Potassium Niobate Ferroelectric Single Crystals