Domain Switching Kinetics of Lead Zirconate Titinate Thin Films

概要

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Domain switching behaviors of sol-gel derived lead zirconate titinate (PZT) films have been characterized for ferroelectric memory applications by measuring $P$-$E$ hysteresis curves as a function of frequency, temperature and electrode size. The coercive field ($E_{\text{c}}$) of PZT films strongly depended on the measuring frequency, nevertheless their remanent polarization ($P_{\text{r}}$) was almost independent of it. The frequency dependence of $E_{\text{c}}$ could be explained based on the nucleation-controlled model of domain switching. A linear relation was obtained between logarithmic frequency and $1/{E_{\text{c}}}^{2}$. The slope of the line was subject to temperature and the interception of that, at $1/{E_{\text{c}}}^{2}{=}0$, was subject to electrode size. A guideline was proposed to enable ferroelectric memories to operate at higher speeds and lower voltages.
Japan Society of Applied Physicsの論文
2003-12-15