Formation of Ultra-Shallow and Low-Leakage p^+n Junctions by Low-Temperature Post-Implantation Annealing
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概要
- 論文の詳細を見る
- 1996-08-26
著者
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Nakada A
Vlsi Design And Education Center The University Of Tokyo
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Ohmi Tadahiro
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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KANEMOTO Kei
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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NAKADA Akira
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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OKA Mauricio
Department of Electronic Engineering, Faculty of Engineering, Tohoku University
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TAMAI Yukio
Department of Electronic Engineering, Faculty of Engineering, Tohoku University
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Oka Maurichio
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Ohmi Tadahiro
Department Of Electronic Engineering
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Tamai Yukio
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Kanemoto Kei
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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