Very-Low-Temperature Epitaxial Silicon Growth By Low-Kinetic-Energy Particle Bombardment : Silicon Devices and Process Technologies(<Special Section>Solid State Devices and Materials 1)
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-11-20
著者
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Ohmi Tadahiro
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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ICHIKAWA TAKESHI
Department of Medicine and Molecular Science, Gunma University Graduate School of Medicine
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Ohmi Tadahiro
Department Of Electronic Engineering
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Ohmi Tadahiro
Departmnent Of Electronics Faculty Of Engineering Tohoku University
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Ichikawa Takeshi
Departmnent Of Electronics Faculty Of Engineering Tohoku University
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MATSUDO Kiyohiko
Departmnent of Electronics, Faculty of Engineering Tohoku University
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SHIBATA Tadshi
Departmnent of Electronics, Faculty of Engineering Tohoku University
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IWABUCHI Hiroshi
Departmnent of Electronics, Faculty of Engineering Tohoku University
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Shibata Tadshi
Departmnent Of Electronics Faculty Of Engineering Tohoku University
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Matsudo Kiyohiko
Departmnent Of Electronics Faculty Of Engineering Tohoku University
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Ichikawa Takeshi
Department Of Medicine And Molecular Science Gunma University Graduate School Of Medicine
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Iwabuchi Hiroshi
Departmnent Of Electronics Faculty Of Engineering Tohoku University
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Iwabuchi Hiroshi
Department Of Dentistry And Oral Surgery School Of Medicine Keio University
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Ichikawa Takeshi
Department of Electrical Engineering, Faculty of Engineering, Fukui University
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