Static Negative Resistance in Highly Doped Gunn Diodes and Application to Switching and Amplification
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概要
- 論文の詳細を見る
Stationary distributions of the field and the electron density of the trapped domain in highly doped Gunn devices are calculated by a computer simulation and a simple numerical analysis. From these results, characteristics of the bistable switching due to the static negative resistance are clarified against the donor density of the active region. The results of the computer simulation also demonstrates possibilities of the wide band reflection amplification with the frequencies independent of the transit time in the overcritically doped Gunn diodes.
- 社団法人応用物理学会の論文
- 1973-12-05
著者
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Ohmi Tadahiro
Department Of Electronic Engineering
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Ohmi Tadahiro
Department Of Electronics Tokyo Institute Of Technology:(present Address)research Institute Of Elect
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Murayama Kimio
Department Of Electronics Tokyo Institute Of Technology:(present Address)tokyo Data Center
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