High-Reliability Lithography Performed by Ultrasonic and Surfactant-Added Developing System

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概要

• 論文の詳細を見る

• Formation of high-precision fine resist patterns has been achieved by an effective removal of dissolved resist polymers, that is, the reaction products of the development process. Also, it has been found that the reaction products give rise to the degradation of the resist contrast, resist sensitivity, and process margins. In order to remove the reaction products, two techniques have been employed, namely physical method of development with agitation (ultrasonic waves or with a stirrer) and chemical method of adding surfactant to the developer. By combining physical and chemical methods, the dissolved polymers have been effectively removed, thus allowing the resist to reveal its inherent patterning pertormance.

• 社団法人応用物理学会の論文
• 1994-01-30

著者

• Shimomura S

  Graduate School Of Science And Engineering Ehime University

• Shimomura Satoshi

  Department Of Physical Science Graduate School Of Engineering Science Osaka University

• Ohmi Tadahiro

  Department Of Electronic Engineering

• IWAMOTO Toshiyuki

  Department of Polymer Science and Engineering, Faculty of Textile Science, Kyoto Institute of Techno

• SHIMADA Hisayuki

  Department of Electronics, Faculty of Engineering, Tohoku University

• SHIMOMURA Shigeki

  Department of Electronics, Faculty of Engineering, Tohoku University

• ONODERA Masanobu

  Department of Electronics, Faculty of Engineering, Tohoku University

• Iwamoto Toshiyuki

  Department Of Electronics Faculty Of Engineering Tohoku University

• Onodera Masanobu

  Department Of Electronics Faculty Of Engineering Tohoku University:laboratory For Microelectronics R

• Shimada Hisayuki

  Department Of Electronics Faculty Of Engineering Tohoku University:laboratory For Microelectronics R

• Iwamoto Toshiyuki

  Department Of Electronic Engineering Faculty Of Engineering Tohoku University

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