Reducing Reverse-Bias Current in 450℃-Annealed n^+p Junction by Hydrogern Radical Sintering
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-02-28
著者
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SHIBATA Tadashi
Department of Physics,Faculty of Science,Osaka University
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Shibata Tadashi
Department Of Information And Communication Engineering The University Of Tokyo
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Nakada A
Vlsi Design And Education Center The University Of Tokyo
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NITTA Takahisa
Device Development Center, Hitachi, Ltd.
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Shibata T
Univ. Tokyo Tokyo Jpn
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Shibata T
Department Of Information And Communication Engineering The University Of Tokyo
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Ohmi Tadahiro
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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NAKADA Akira
Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
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Oka Maurichio
Department of Electronic Engineering, Faculty of Engineering, Tohoku University
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Tomita Kazuo
Department of Electronic Engineering, Faculty of Engineering, Tohoku University
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Shibata Tadashi
Department Of Electrical Engineering And Information Systems School Of Engineering The University Of
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Tomita Kazuo
Department Of Cardiovascular Medicine Hokkaido University School Of Medicne
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Oka Maurichio
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Tomita Kazuo
Department Of Electronic Engineering Faculty Of Engineering Tohoku University
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Ohmi Tadahiro
Department Of Electronic Engineering
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Nitta Takahisa
Device Development Center Hitachi Ltd.
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Shibata T
Ntt Photonics Laboratories Ntt Corporation:(present Address)ntt Science And Core Technology Group Nt
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Shibata Tadashi
Department of Electrical Engineering and Information System, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
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