Self-Aligned Aluminum-Gate MOSFET's Having Ultra-Shallow Junctions Formed by 450℃ Furnace Annealing (Special Issue on Sub-Half Micron Si Device and Process Technologies)
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概要
- 論文の詳細を見る
Self-aligned aluminum-gate MOSFET's have been successfully fabricated by employing ultraclean ion implantation technology. The use of ultra high vacuum ion implanter and the suppression of high-energy ion-beam-induced metal sputter contamination have enabled us to form ultra-shallow low-leakage pn junctions by furnace annealing at a temperature as low as 450℃. The fabricated aluminum-gate MOSFET's have exhibited good electrical characteristics, thus demonstrating a large potential for application to realizing ultra-high-speed integrated circuits.
- 社団法人電子情報通信学会の論文
- 1993-04-25
著者
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Kotani K
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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Kotani Koji
Graduate School Of Engineering Tohoku University
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Kotani Koji
Faculty of Environment and Information Sciences, Yokohama National University
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Shibata Tadashi
Department Of Information And Communication Engineering The University Of Tokyo
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Shibata T
Univ. Tokyo Tokyo Jpn
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Shibata T
Department Of Information And Communication Engineering The University Of Tokyo
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Kotani Koji
Laboratory For Electronic Intelligent Systems Research Institute Of Electrical Communication Tohoku
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OHMI Tadahiro
Faculty of Engineering, Tohoku University
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Kotani K
Tohoku Univ. Sendai‐shi Jpn
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Shibata Tadashi
Faculty of Engineering, Tohoku University
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Ohmi Tadahiro
Faculty Of Engineering Tohoku University
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Shibata T
Ntt Photonics Laboratories Ntt Corporation:(present Address)ntt Science And Core Technology Group Nt
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Shimonishi Satoshi
Faculty of Engineering, Tohoku University
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Migita Tomohiro
Faculty of Engineering, Tohoku University
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Komori Hideki
Faculty of Engineering, Tohoku University
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Komori Hideki
Faculty Of Engineering Tohoku University
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Migita Tomohiro
Faculty Of Engineering Tohoku University
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Shimonishi Satoshi
Faculty Of Engineering Tohoku University
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Shibata Tadashi
Faculty Of Engineering Science Osaka University
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Ohmi Tadahiro
Faculty Of Engineering Tohoku Univ.
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