Strain-induced back channel electron mobility enhancement in polycrystalline silicon thin-film transistors fabricated by continuous-wave laser lateral crystallization (Special issue: Solid state devices and materials)
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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Kotani K
Department Of Electronic Engineering Graduate School Of Engineering Tohoku University
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Kotani K
Tohoku Univ. Sendai‐shi Jpn
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