Characteristics of Nano-Grating N-Channel MOSFETs for Improved Current Drivability(Semiconductor Materials and Devices)

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概要

• 論文の詳細を見る

• Drivability-improved MOSFETs were successfully fabricated by using nano-grating silicon wafers. There was almost no additional process change in device fabrication when the height of the gratings was less than the conventional macroscopic wafer surface roughness. The MOSFETs with the grating height of 35nm showed 21% improvement in current drivability compared to the conventional one with the same device occupancy area. And the roll-off characteristic of threshold voltage of nano-grating device held the line of conventional one in despite of the 3-D channel structure. The technology provides great advantages for drivability improvement without paying much tradeoff of process cost. This proposal will be useful to CMOS-LSIs with high performance in general.

• 社団法人電子情報通信学会の論文
• 2007-09-01

著者

• Kotani K

  Department Of Electronic Engineering Graduate School Of Engineering Tohoku University

• Kotani Koji

  Graduate School Of Engineering Tohoku University

• Kotani K

  Tohoku Univ. Sendai‐shi Jpn

• ITO Takashi

  Graduate School of Engineering, Tohoku University

• MISHIMA Yasuyoshi

  Fujitsu Laboratories Ltd.

• Zhu Xiaoli

  Tohoku University

• Mishima Yasuyoshi

  Advanced Cmos Labolatories Fujitsu Laboratories Ltd.

• FUKUDA Masatoshi

  Fujitsu Laboratories Ltd.

• SHIDO Hideharu

  Fujitsu Laboratories Ltd.

• ZHU Xiaoli

  Graduate School of Engineering, Tohoku University

• KUROKI Shin-Ichiro

  Graduate School of Engineering, Tohoku University

• Shido Hideharu

  Advanced Cmos Labolatories Fujitsu Laboratories Ltd.

• Fukuda Masatoshi

  Advanced Cmos Labolatories Fujitsu Laboratories Ltd.

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