Neuron MOS Voltage-Mode Circuit Technology for Multiple-Valued Logic (Special Issue on Multiple-Valued Integrated Circuits)
スポンサーリンク
概要
- 論文の詳細を見る
We have developed a new functional MOS transistor called Neuron MOSFET (abbreviated as neuMOS or _νMOS) which simulates the function of biological neurons. The new transistor is capable of executing a weighted sum calculation of multiple input signals and threshold operation based on the result of weighted summation, all in the voltage mode at a single transistor level. By utilizing its neuron-like very powerful functional capability, various circuits essential for multiple-valued logic operation have been designed using quite simple circuit configurations. The circuit designs for data conversion between the multivalued and binary logic systems and for generating universal literal functions are described and their experimental verifications are presented. One of the most important features of _νMOS multivalued logic circuit is that the circuit operates basically in the voltage mode, thus greatly reducing the power dissipation as compared to the conventional current mode circuitry. This is indeed most essential in implementing multivalued logic systems in ultra large scale integration. Another important feature of _νMOS design is in its flexibility of implementing logic functions. The functional form of a universal literal function, for instance, can be arbitrarily altered by external signals without any modifications in its hardware configuration. A circuit representing multiple-valued multi-threshold functions is also proposed.
- 社団法人電子情報通信学会の論文
- 1993-03-25
著者
-
Ohmi Tadahiro
Faculty Of Engineering Tohoku University
-
Shibata Tadashi
Faculty Of Engineering Tohoku University
-
Shibata Tadashi
Faculty Of Engineering Science Osaka University
-
Ohmi Tadahiro
Faculty Of Engineering Tohoku Univ.
関連論文
- Neutralization of Static Electricity by Soft X-Ray and Vacuum Ultraviolet (UV)-Ray Irradiation (Special Issue on Scientific ULSI Manufacturing Technology)
- Characterizing Film Quality and Electromigration Resistance of Giant-Grain Copper Interconnects (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- Oxidation Process of Hydrogen Terminated Silicon Surface Studied by Thermal Desorption Spectroscopy
- Quick External Leakage Inspection Method for Gas Supplying System in Semiconductor Facility Using Atmospheric Pressure Ionization Mass Spectrometer
- Impact of High-Precision Processing on the Functional Enhancement of Neuron-MOS Integrated Circuits (Special Issue on Scientific ULSI Manufacturing Technology)
- Self-Aligned Aluminum-Gate MOSFET's Having Ultra-Shallow Junctions Formed by 450℃ Furnace Annealing (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- Spatial Distribution of the Light Intensity in the Injection Lasers
- Advanced Fluorite Regeneration Technology to Recover Spent Fluoride Chemicals Drained from Semiconductor Manufacturing Process (Special Issue on Scientific ULSI Manufacturing Technology)
- Improvement of PECVD-SiN_x for TFT Gate Insulator by Controlling Ion Bombardment Energy (Special Issue on Scientific ULSI Manufacturing Technology)
- Cr_2O_3 Passivated Gas Tubing System for Specialty Gases (Special Issue on Scientific ULSI Manufacturing Technology)
- The Concept of Four-Terminal Devices and Its Significance in the Implementation of Intelligent Integrated Circuits (Special Issue on Super Chip for Intelligent Integrated Systems)
- Neuron MOS Voltage-Mode Circuit Technology for Multiple-Valued Logic (Special Issue on Multiple-Valued Integrated Circuits)
- Theory of Magnetic Moment Ordering in Heavy Rare Earth Alloys at Medium Temperatures
- Minimizing the Edge Effect in a DRAM Cell Capacitor by Using a Structure with High-Permittivity Thin Film (Special Issue on Sub-Half Micron Si Device and Process Technologies)