Oxidation Process of Hydrogen Terminated Silicon Surface Studied by Thermal Desorption Spectroscopy
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-03-15
著者
-
Morita Mizuho
Faculty Of Engineering Tohoku University
-
OHMI Tadahiro
Faculty of Engineering, Tohoku University
-
Saito Kazuyuki
Ntt Lsi Laboratories
-
Ohmi Tadahiro
Faculty Of Engineering Tohoku University
-
Yabumoto Norikuni
Ntt Lsi Laboratories
-
Ohmi Tadahiro
Faculty Of Engineering Tohoku Univ.
関連論文
- Neutralization of Static Electricity by Soft X-Ray and Vacuum Ultraviolet (UV)-Ray Irradiation (Special Issue on Scientific ULSI Manufacturing Technology)
- Characterizing Film Quality and Electromigration Resistance of Giant-Grain Copper Interconnects (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- A Unified Analysis on Hot Carrier Generation in p-Channel and n-Channel MOSFET's : Special Section : Solid State Devices and Materials 2 : Silicon Devices and Process Technologies
- Photoemission Study on Initial Oxidation of Si Surfaces by Super-Pure Oxygen Gas
- Oxidation Process of Hydrogen Terminated Silicon Surface Studied by Thermal Desorption Spectroscopy
- Water-Adsorbed States on Silicon and Silicon Oxide Surfaces Analyzed by using Heavy Water
- Quick External Leakage Inspection Method for Gas Supplying System in Semiconductor Facility Using Atmospheric Pressure Ionization Mass Spectrometer
- Impact of High-Precision Processing on the Functional Enhancement of Neuron-MOS Integrated Circuits (Special Issue on Scientific ULSI Manufacturing Technology)
- Self-Aligned Aluminum-Gate MOSFET's Having Ultra-Shallow Junctions Formed by 450℃ Furnace Annealing (Special Issue on Sub-Half Micron Si Device and Process Technologies)
- Spatial Distribution of the Light Intensity in the Injection Lasers
- Advanced Fluorite Regeneration Technology to Recover Spent Fluoride Chemicals Drained from Semiconductor Manufacturing Process (Special Issue on Scientific ULSI Manufacturing Technology)
- Improvement of PECVD-SiN_x for TFT Gate Insulator by Controlling Ion Bombardment Energy (Special Issue on Scientific ULSI Manufacturing Technology)
- Cr_2O_3 Passivated Gas Tubing System for Specialty Gases (Special Issue on Scientific ULSI Manufacturing Technology)
- The Concept of Four-Terminal Devices and Its Significance in the Implementation of Intelligent Integrated Circuits (Special Issue on Super Chip for Intelligent Integrated Systems)
- Neuron MOS Voltage-Mode Circuit Technology for Multiple-Valued Logic (Special Issue on Multiple-Valued Integrated Circuits)
- Minimizing the Edge Effect in a DRAM Cell Capacitor by Using a Structure with High-Permittivity Thin Film (Special Issue on Sub-Half Micron Si Device and Process Technologies)