Improvement of PECVD-SiN_x for TFT Gate Insulator by Controlling Ion Bombardment Energy (Special Issue on Scientific ULSI Manufacturing Technology)
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概要
- 論文の詳細を見る
It has been revealed that ion bombardment energy and ion flux density play an essentially critical role in SiN_x deposition process of PECVD in TFT-LCD production. Ion energy and ion flux density bombarding onto substrate surface are known to be extracted from waveform of RF applied to an electrode. Using this method, we investigated film quality of SiN_x formed in the conventional parallel plate PECVD equipment. When N_2+H_2 or N_2+Ar is employed as a carrier gas in source gas (SiH_4+NH_3), we have defined normalized ion flux density as ion flux density divided by deposited SiN_x molecule which must be increased to obtain high quality SiN_x film while ion energy is suppressed at low level as not giving damages on the film surface. This technique has made it possible to securely form SiN_x film (2500 Å) featuring dielectric breakdown field intensity of 8.5 MV/cm at 250℃ on a glass substrate with Cr gate interconnects of 1000 Å having vertical step structure. One of the important factors to improve film quality of SiN_x deposited in PECVD is to increase ion flux density while keeping ion bombardment energy low enough to protect growing surface against any damages. Using this technique inverse-staggered TFT-array featuring field effect mobility of O.96 cm^2/V・s has been demonstrated which gate insulator SiN_x, nondoped a-Si:H and a-Si:H(n^+) were formed continuously at the identical substrate temperature of 250℃.
- 社団法人電子情報通信学会の論文
- 1996-03-25
著者
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Kasama Yasuhiko
Faculty Of Engineering Tohoku University
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Ohmi Tadahiro
Faculty Of Engineering Tohoku University
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Fukui Hirobumi
Department Of Information And Communication Engineering The University Of Tokyo
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FUKUDA Koichi
R amp D Div., FRONTEC Inc.
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FUKUI Hirobumi
R amp D Div., FRONTEC Inc.
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IWASAKI Chisato
R amp D Div., FRONTEC Inc.
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0N0 Shoichi
Alps Electric Co., Ltd.
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Fukuda Koichi
R Amp D Div. Frontec Inc.
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0n0 Shoichi
Alps Electric Co. Ltd.
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Iwasaki Chisato
R Amp D Div. Frontec Inc.
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Ohmi Tadahiro
Faculty Of Engineering Tohoku Univ.
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