Proposal of a Schottky-Barrier SET Aiming at a Future Integrated Device (Special Issue on New Concept Device and Novel Architecture LSIs)
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概要
- 論文の詳細を見る
The performances of an SET required for integration are discussed. Conventional SETs had several problems such as large leakage current, insufficient voltage gain and so on. To overcome these problems, a new SET utilizing Schottky barriers as tunnel junctions is proposed. Its current characteristics and Coulomb-blockade conditions are calculated and the effectiveness for an integrated device is discussed.
- 社団法人電子情報通信学会の論文
- 1997-07-25
著者
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Amakawa S
School Of Engineering The University Of Tokyo
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Amakawa Shuhei
School Of Engineering The University Of Tokyo
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Hoh Koichiro
Vlsi Design And Education Center The University Of Tokyo
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FUJISHIMA Minoru
VLSI Design and Education Center, the University of Tokyo
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FUKUI Hironobu
School of Engineering, The University of Tokyo
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Fukui Hirobumi
Department Of Information And Communication Engineering The University Of Tokyo
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Fujishima M
School Of Frontier Sciences The University Of Tokyo
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Fujishima M
Department Of Frontier Informatics Graduate School Of Frontier Sciences The University Of Tokyo
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