Single-Electron Transistor in Silicon-on-Insulator with Schottky-Contact Tunnel Barriers (<Special Issue> Quantum Dot Structures)

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概要

• 論文の詳細を見る

• We have proposed a novel single-electron transistor (SET) with Schottky tunnel barriers. The proposed SET can be fabricated by employing the standard salicide process and can be merged in the current CMOS VLSI (complementary metal-oxide-semiconductor-very-large-scale integration). We analyzed its characteristics using the Poisson equation and the master equation based on the semi-classical theory. Calculation results show that the proposed SET has good cutoff characteristics similar to those of conventional MOSFETs (metal-oxide-semiconductor-field-effect transistors) while its gate-periodic characteristics are similar to those of conventional SETs.

• 社団法人応用物理学会の論文
• 1997-06-30

著者

• Hoh Koichiro

  Vlsi Design And Education Center The University Of Tokyo

• FUJISHIMA Minoru

  VLSI Design and Education Center, the University of Tokyo

• Fukui Hirobumi

  Department Of Information And Communication Engineering The University Of Tokyo

• Fukui Hironobu

  Department Of Electronic Engineering The University Of Tokyo

• Fujishima M

  School Of Frontier Sciences The University Of Tokyo

• Fujishima M

  Department Of Frontier Informatics Graduate School Of Frontier Sciences The University Of Tokyo

関連論文

• A Simple Model of a Single-Electron Floating Dot Memory for Circuit Simulation
• Single-Electron Circuit Simulation (Special Issue on Technology Challenges for Single Electron Devices)
• Proposal of a Schottky-Barrier SET Aiming at a Future Integrated Device (Special Issue on New Concept Device and Novel Architecture LSIs)
• Correlated Electron-Hole Transport in Capacitively-Coupled One-Dimensional Tunnel Junction Arrays ( Quantum Dot Structures)
• Cotunneling-Tolerant Single-Electron Logic
• Circuit Simulators Aiming at Single-Electron Integration
• A Compactly Integrated Random-Signal Source Using Chaos Multivibrator
• Analysis of a Multivibrator-Based Simple CMOS Chaos Generator (Special Section on Nonlinear Theory and Its Applications)
• Single-Electron Transistor in Silicon-on-Insulator with Schottky-Contact Tunnel Barriers ( Quantum Dot Structures)
• Improvement of PECVD-SiN_x for TFT Gate Insulator by Controlling Ion Bombardment Energy (Special Issue on Scientific ULSI Manufacturing Technology)
• Simple and Stable Single-Electron Logic Utilizing Tunnel-Junction Load
• Estimation of Cotunneling in Single-Electron Logic and Its Suppression

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