FUJISHIMA Minoru | VLSI Design and Education Center, the University of Tokyo
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概要
関連著者
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Hoh Koichiro
Vlsi Design And Education Center The University Of Tokyo
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FUJISHIMA Minoru
VLSI Design and Education Center, the University of Tokyo
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Fujishima M
School Of Frontier Sciences The University Of Tokyo
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Fujishima M
Department Of Frontier Informatics Graduate School Of Frontier Sciences The University Of Tokyo
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Amakawa S
School Of Engineering The University Of Tokyo
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Fukui Hirobumi
Department Of Information And Communication Engineering The University Of Tokyo
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AMAKAWA Shuhei
Department of Semiconductor Electronics and Integration Science, Graduate school of advanced Science
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Amakawa Shuhei
School Of Engineering The University Of Tokyo
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Fukui Hironobu
Department Of Electronic Engineering The University Of Tokyo
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Amakawa Shuhei
Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences
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Amakawa Shuhei
Department of Information and Communication Engineering, the University of Tokyo,
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Majima Hideaki
The Institute Of Industrial Science The University Of Tokyo
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Majima Hideaki
Department Of Information And Communication Engineering The University Of Tokyo:the Institute Of Ind
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FUKUI Hironobu
Department of Information and Communication Engineering, the University of Tokyo
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FUKUI Hironobu
School of Engineering, The University of Tokyo
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FIJISHIMA Minoru
VLSI Design and Education Center, The University of Tokyo
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Fujishima M
Vlsi Design And Education Center The University Of Tokyo
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Hoh Koichiro
VLSI Design and Education Center, the University of Tokyo
著作論文
- Single-Electron Circuit Simulation (Special Issue on Technology Challenges for Single Electron Devices)
- Proposal of a Schottky-Barrier SET Aiming at a Future Integrated Device (Special Issue on New Concept Device and Novel Architecture LSIs)
- Correlated Electron-Hole Transport in Capacitively-Coupled One-Dimensional Tunnel Junction Arrays ( Quantum Dot Structures)
- Circuit Simulators Aiming at Single-Electron Integration
- Single-Electron Transistor in Silicon-on-Insulator with Schottky-Contact Tunnel Barriers ( Quantum Dot Structures)