Amakawa Shuhei | School Of Engineering The University Of Tokyo
スポンサーリンク
概要
関連著者
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Amakawa Shuhei
School Of Engineering The University Of Tokyo
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Amakawa S
School Of Engineering The University Of Tokyo
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Hoh Koichiro
School Of Frontier Sciences The University Of Tokyo:crest Japan Science And Technology Corporation
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Hoh Koichiro
Vlsi Design And Education Center The University Of Tokyo
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TSUBOKURA Takeshi
School of Engineering, the University of Tokyo
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FUJISHIMA Minoru
VLSI Design and Education Center, the University of Tokyo
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FUJISHIMA Minoru
School of Engineering, The University of Tokyo
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TAJIMA Takuro
School of Engineering, the University of Tokyo
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FUKUI Hironobu
School of Engineering, The University of Tokyo
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Tajima Takuro
School Of Engineering The University Of Tokyo
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Fukui Hirobumi
Department Of Information And Communication Engineering The University Of Tokyo
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FIJISHIMA Minoru
VLSI Design and Education Center, The University of Tokyo
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Fujishima M
Vlsi Design And Education Center The University Of Tokyo
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Fujishima Minoru
School Of Engineering The University Of Tokyo
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Fujishima M
School Of Frontier Sciences The University Of Tokyo
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Fujishima M
Department Of Frontier Informatics Graduate School Of Frontier Sciences The University Of Tokyo
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Amakawa Shuhei
School of Engineering, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Tsubokura Takeshi
School of Engineering, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Hoh Koichiro
VLSI Design and Education Center, the University of Tokyo
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Hoh Koichiro
School of Frontier Sciences, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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Fujishima Minoru
School of Frontier Sciences, the University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
著作論文
- Charging and Retention Times in Silicon-Floating-Dot-Single-Electron Memory
- Proposal of a Schottky-Barrier SET Aiming at a Future Integrated Device (Special Issue on New Concept Device and Novel Architecture LSIs)
- Circuit Simulators Aiming at Single-Electron Integration
- Charging and Retention Times in Silicon-Floating-Dot-Single-Electron Memory