Charging and Retention Times in Silicon-Floating-Dot-Single-Electron Memory

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概要

• 論文の詳細を見る
• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 2001-03-01

著者

• Amakawa S

  School Of Engineering The University Of Tokyo

• Amakawa Shuhei

  School Of Engineering The University Of Tokyo

• Hoh Koichiro

  School Of Frontier Sciences The University Of Tokyo:crest Japan Science And Technology Corporation

• FUJISHIMA Minoru

  School of Engineering, The University of Tokyo

• TSUBOKURA Takeshi

  School of Engineering, the University of Tokyo

• TAJIMA Takuro

  School of Engineering, the University of Tokyo

関連論文

• 4.8GHz CMOS Frequency Multiplier Using Subharmonic Pulse-Injection Locking for Spurious Suppression
• A Scalable Model of Shielded Capacitors Using Mirror Image Effects(Recent Technologies for Microwave and Millimeter-wave Passive Devices)
• Charging and Retention Times in Silicon-Floating-Dot-Single-Electron Memory
• A Simple Model of a Single-Electron Floating Dot Memory for Circuit Simulation
• Single-Electron Circuit Simulation (Special Issue on Technology Challenges for Single Electron Devices)
• Proposal of a Schottky-Barrier SET Aiming at a Future Integrated Device (Special Issue on New Concept Device and Novel Architecture LSIs)
• Correlated Electron-Hole Transport in Capacitively-Coupled One-Dimensional Tunnel Junction Arrays ( Quantum Dot Structures)
• Estimation of Cotunneling in Single-Electron Logic and Its Suppression
• Cotunneling-Tolerant Single-Electron Logic
• Circuit Simulators Aiming at Single-Electron Integration
• An Integrated Low-Power CMOS Up-Conversion Mixer Using New Stacked Marchand Baluns(Analog and Communications,Low-Power, High-Speed LSIs and Related Technologies)
• Recent trends and future prospective on millimeter-wave CMOS circuits
• Analysis of a Multivibrator-Based Simple CMOS Chaos Generator (Special Section on Nonlinear Theory and Its Applications)
• Fractally-Structured CMOS Processor for Quantum-Circuit Emulation
• A Programmable SIMD Processor for Universal Quantum-Circuit Simulator
• Charging and Retention Times in Silicon-Floating-Dot-Single-Electron Memory

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