A Scalable Model of Shielded Capacitors Using Mirror Image Effects(<Special Section>Recent Technologies for Microwave and Millimeter-wave Passive Devices)

概要

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Comb capacitors suitable for use in advanced complementary metal-oxide semiconductor (CMOS) technology nodes are frequently constructed from low metal layers located closely above the conductive silicon substrate. This results in high parasitic capacitances across the thin dielectric between the two layers. Therefore, a shield for reducing this parasitic capacitance is proposed in order to use the comb capacitor at high frequency. From electromagnetic (EM) simulation results using a 3D EM simulator, the quality factor (Q-factor) of the proposed shielded comb capacitor for the differential signal improved by 20% at 30-110GHz compared to the unshielded capacitor. Consequently, a scalable model is proposed, which operates up to millimeter-wave frequencies. The results are verified by experimental data using fabricated comb capacitors from a 90nm 1P9M CMOS process. Compared with the experimental results, the simulated common-mode and differential-mode S parameters of the model has a root-mean-square (r.m.s.) error of under 2.1%.
社団法人電子情報通信学会の論文
2007-12-01