Single-Electron Circuit Simulation (Special Issue on Technology Challenges for Single Electron Devices)
スポンサーリンク
概要
- 論文の詳細を見る
Various techniques of single-electron circuit simulation are presented. The subjects include visualization of state probabilities, accurate yet reasonably fast steady-state analysis and SPICE-based high-speed simulation for circuits composed of Single-Electron Transistors (SETs). The visualized state probabilities allow one to grasp the dynamics of a single-electron circuit intuitively. The new algorithm for steady-state analysis uses the master equation and Monte Carlo method in combination. We suppose this is the best way to perform steady-state analysis. The SPICE-based simulator significantly outperforms the conventional reference simulator in speed. It is, to the best of our knowledge, the only simulator tllat can simulate SET circuits for real applications. It also facilitates the study of the integration of SETs and MOS FETs.
- 社団法人電子情報通信学会の論文
- 1998-01-25
著者
-
AMAKAWA Shuhei
Department of Semiconductor Electronics and Integration Science, Graduate school of advanced Science
-
Amakawa S
School Of Engineering The University Of Tokyo
-
Majima Hideaki
The Institute Of Industrial Science The University Of Tokyo
-
Majima Hideaki
Department Of Information And Communication Engineering The University Of Tokyo:the Institute Of Ind
-
Hoh Koichiro
Vlsi Design And Education Center The University Of Tokyo
-
FUKUI Hironobu
Department of Information and Communication Engineering, the University of Tokyo
-
FUJISHIMA Minoru
VLSI Design and Education Center, the University of Tokyo
-
Fukui Hirobumi
Department Of Information And Communication Engineering The University Of Tokyo
-
Fukui Hironobu
Department Of Electronic Engineering The University Of Tokyo
-
Fujishima M
School Of Frontier Sciences The University Of Tokyo
-
Fujishima M
Department Of Frontier Informatics Graduate School Of Frontier Sciences The University Of Tokyo
-
Amakawa Shuhei
Department Of Semiconductor Electronics And Integration Science Graduate School Of Advanced Sciences
-
Amakawa Shuhei
Department of Information and Communication Engineering, the University of Tokyo,
関連論文
- RF CMOS Integrated Circuit: History, Current Status and Future Prospects
- Suppression of Short Channel Effect in Triangular Parallel Wire Channel MOSFETs(Special Issue on Advanced Sub-0.1μm CMOS Devices)
- Effects of Dot Size and its Distribution on Electron Number Control in Metal-Oxide-Semiconductor-Field-Effect-Transistor Memories Based on Silicon Nanocrystal Floating Dots
- Charging and Retention Times in Silicon-Floating-Dot-Single-Electron Memory
- A Simple Model of a Single-Electron Floating Dot Memory for Circuit Simulation
- Single-Electron Circuit Simulation (Special Issue on Technology Challenges for Single Electron Devices)
- Proposal of a Schottky-Barrier SET Aiming at a Future Integrated Device (Special Issue on New Concept Device and Novel Architecture LSIs)
- Correlated Electron-Hole Transport in Capacitively-Coupled One-Dimensional Tunnel Junction Arrays ( Quantum Dot Structures)
- Estimation of Cotunneling in Single-Electron Logic and Its Suppression
- Cotunneling-Tolerant Single-Electron Logic
- Circuit Simulators Aiming at Single-Electron Integration
- A Compactly Integrated Random-Signal Source Using Chaos Multivibrator
- Analysis of a Multivibrator-Based Simple CMOS Chaos Generator (Special Section on Nonlinear Theory and Its Applications)
- Single-Electron Transistor in Silicon-on-Insulator with Schottky-Contact Tunnel Barriers ( Quantum Dot Structures)
- Improvement of PECVD-SiN_x for TFT Gate Insulator by Controlling Ion Bombardment Energy (Special Issue on Scientific ULSI Manufacturing Technology)
- RF CMOS Integrated Circuit : History, Current Status and Future Prospects
- Simple and Stable Single-Electron Logic Utilizing Tunnel-Junction Load
- Estimation of Cotunneling in Single-Electron Logic and Its Suppression