Minimizing the Edge Effect in a DRAM Cell Capacitor by Using a Structure with High-Permittivity Thin Film (Special Issue on Sub-Half Micron Si Device and Process Technologies)
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概要
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The concentration of the electric field at the edge of the electrode has been simulated in several types of flat DRAM cell capacitors with high permittivity dielectrics. The results indicated that the permittivity of the material surrounding the edge of the electrode as well as the geometrical structure affected the concentration of the electric field. The electric field strength was minimized and most evenly distributed by utilizing the structure in which the sidewall of the capacitor dielectric was terminated at the edge of the electrode by a low-dielectric constant insulator. High-precision fabrication of the capacitor's profile is required for the minimization and uniformity of the electric field.
- 社団法人電子情報通信学会の論文
- 1993-04-25
著者
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Ohmi Tadahiro
Faculty Of Engineering Tohoku University
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Yamashita Takeo
Faculty Of Engineering Tohoku University:research Institute Of Electrical Communication Tohoku Unive
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Ohmi Tadahiro
Faculty Of Engineering Tohoku Univ.
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