A Unified Analysis on Hot Carrier Generation in p-Channel and n-Channel MOSFET's : Special Section : Solid State Devices and Materials 2 : Silicon Devices and Process Technologies

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1988-12-20

著者

• YOSHII Akira

  NTT LSI Laboratories

• Saito Kazuyuki

  Ntt Lsi Laboratories

• Saito K

  Tokyo Metropolitan Univ. Tokyo

関連論文

• Monte Carlo Analysis of Hot Electron Transport and Impact Ionization in Silicon
• A Unified Analysis on Hot Carrier Generation in p-Channel and n-Channel MOSFET's : Special Section : Solid State Devices and Materials 2 : Silicon Devices and Process Technologies
• Oxidation Process of Hydrogen Terminated Silicon Surface Studied by Thermal Desorption Spectroscopy
• Water-Adsorbed States on Silicon and Silicon Oxide Surfaces Analyzed by using Heavy Water
• General-Purpose Device Simulation System with an Effective Graphic Interface
• Simulation of Emitter Size Effects in the Coupled-Quantum-Well Base Resonant Tunneling Transistor
• Two-dimensional Analysis of Resonant Tunneling Using the Time-dependent Schrodinger Equation
• A System for 3D Simulation of Complex Si and Heterostructure Devices (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD93))

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