General-Purpose Device Simulation System with an Effective Graphic Interface

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概要

• 論文の詳細を見る
• 1992-02-25

著者

• TOMIZAWA Masaaki

  NTT LSI Laboratories

• YOSHII Akira

  NTT LSI Laboratories

• Seki Shunji

  Ntt Optoelectronics Laboratories

• Tomizawa Masaaki

  Ntt Lifestyle And Environmental Technology Labs

関連論文

• Monte Carlo Analysis of Hot Electron Transport and Impact Ionization in Silicon
• A Unified Analysis on Hot Carrier Generation in p-Channel and n-Channel MOSFET's : Special Section : Solid State Devices and Materials 2 : Silicon Devices and Process Technologies
• InAlAs/InGaAs Heterojunction Bipolar Transistors with an n-doped InGaAs Spacer
• Accurate Evaluation of Silicon Planar Doping in InAlAs for InAlAs/InGaAs Modulation Doped Structure Grown by Metal Organic Chemical Vapor Deposition
• Statistical Threshold Fluctuations in Si-MOSFETs : Jellium vs. Atomistic Dopant Variations
• General-Purpose Device Simulation System with an Effective Graphic Interface
• Monte Carlo Study of Charge Injection Transistors (CHINTs)
• Simulation of Emitter Size Effects in the Coupled-Quantum-Well Base Resonant Tunneling Transistor
• Two-dimensional Analysis of Resonant Tunneling Using the Time-dependent Schrodinger Equation
• A System for 3D Simulation of Complex Si and Heterostructure Devices (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD93))
• Photoluminescence of Si_Ge_ Quantum Wells Grown on (100)Si by Low-Pressure Chemical Vapor Deposition
• 0.05-μm-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects
• Monte Carlo Simulation of Response Time for Velocity Modulation Transistors
• Experimentally Verified Majority and Minority Mobilities in Heavily Doped GaAs for Device Simulations

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