Accurate Evaluation of Silicon Planar Doping in InAlAs for InAlAs/InGaAs Modulation Doped Structure Grown by Metal Organic Chemical Vapor Deposition

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1995-06-15

著者

• ITO Hiroshi

  NTT LSI Laboratories

• Ito Hiroki

  Development Department Mitsubishi Electric Corporation

• Ito H

  Department Of Energy And Environmental Science Graduate School Of Utsunomiya University

• TOMIZAWA Masaaki

  NTT LSI Laboratories

• KURISHIMA Kenji

  NTT LSI Laboratories

• ENOKI Takatomo

  NTT LSI Laboratories

• ISHII Yasunobu

  NTT LSI Laboratories

• Ishii Y

  Waseda Univ. Tokyo Jpn

• Enoki Takatomo

  Ntt Photonics Laboratories

• Ishii Y

  Yamaguchi Univ. Ube‐shi Jpn

• Kurishima Kenji

  Ntt Photonics Laboratories Ntt Corporation

• Tomizawa M

  Ntt System Electronics Lab. Kanagawa Jpn

• Tomizawa Masaaki

  Ntt Lifestyle And Environmental Technology Labs

関連論文

• Carbon and Indium Codoping in GaAs for Reliable AlGaAs/GaAs Heterojunction Bipolar Transistors
• Influence of Substrate Misorientation on Current Gain in AlGaAs/GaAs Heterojunction Bipolar Transistors Grown by Metal Organic Chemical Vapor Deposition
• Influence of Substrate Misorientation on Carbon Incorporation in GaAs by Metal Organic Chemical Vapor Deposition
• Low-Temperature Metalorganic Chemical Vapor Deposition Growth of InGaAs for a Non-Alloyed Ohmic Contact to n-GaAs
• Generation of Sub-picosecond GeV Electron Bunches by Laser Acceleration in Vacuum
• Reflection-Induced Light Correlation in Spontaneous Emission in Front of a Mirror
• Laser Emission from Dye-Doped Small Spheres by Ultraviolet N_2 Laser Pumping
• Exclusive OR/NOR IC for 40-Gbit/s Clock Recovery Circuit (Special Issue on Ultra-High-Speed IC and LSI Technology)
• Superconducting Three-Terminal Devices Using an InAs-Based Two-Dimensional Electron Gas
• Ultrahigh-Speed IC Technologies Using InP-Based HEMTs for Future Optical Communication Systems (Special Issue on Ultra-High-Speed IC and LSI Technology)
• Ultrahigh-Speed Integrated Circuits Using InP-Based HEMTs
• Ultrahigh-Speed Integrated Circuits Using InP-Based High-Electron-Mobility Transistors(HEMTs)
• Rotary Ultrasonic Motor Using Symmetric Contour Vibration of Rectangular Plate
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• Rotary Ultrasonic Flat Motor : High Power Ultrasonics
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• W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-μm Gate InP-Based HEMTs(Millimeter-Wave Devices,Heterostructure Microelectronics with TWHM2005)
• Monte Carlo Analysis of Hot Electron Transport and Impact Ionization in Silicon
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• Performance and Stability of MOVPE-Grown Carbon-Doped InP/InGaAs HBT's Dehydrogenated by an Anneal after Emitter Mesa Formation
• Performance and Stability of MOVPE-Grown Carbon-Doped InP/InGaAs HBT's De-Hydrogenated by an Anneal after Emitter Mesa Formation
• Heavily Carbon Doped Base InP/InGaAs Heterojunction Bipolar Transistors Grown by Two-Step Metalorganic Chemical Vapor Deposition
• Ultrahigh-Speed InP/InGaAs Double-Heterostructure Bipolar Transistors and Analyses of Their Operation
• Growth and Characterization of High-Speed Carbon-Doped-Base InP/InGaAs Heterojunction Bipolar Transistors by Metalorganic Chemical Vapor Deposition
• Growth, Design and Performance of InP-Based Heterostructure Bipolar Transistors
• Effects of a Compositionally-Graded In_xGa_As Base in Abrupt-Emitter InP/InGaAs Heterojunction Bipolar Transistors
• Lateral Scaling Investigation on DC and RF Performances of InP/InGaAs Heterojunction Bipolar Transistors
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• Electronic NO_2 Sensor Using Merocyanine-Doped Langmuir Blodgett Films
• Accurate Evaluation of Silicon Planar Doping in InAlAs for InAlAs/InGaAs Modulation Doped Structure Grown by Metal Organic Chemical Vapor Deposition
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• Novel Gate-Recess Process for the Reduction of Parasitic Phenomena Due to Side-Etching in InAlAs/InGaAs HEMTs
• A Fully Monolithic Integrated 43-Gbit/s Clock and Data Recovery Circuit Using InAlAs/InGaAs/InP HEMTs
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• High-Frequency Characteristics of SrTiO_3 Thin Films in the mm-Wave Band
• Influence of Minority Hole Injection on Current Gain Characteristics in AlGaAs/GaAs Heterojunction Bipolar Transistors
• Fabrication of Small AlGaAs/GaAs HBT's for Integrated Circuits Using New Bridged Base Electrode Technology
• Extrinsic Base Surface Recombination Current in Surface-Passivated InGaP/GaAs Heterojunction Bipolar Transistors
• Current-Induced Degradation of AlGaAs/GaAs Heterojunction Bipolar Transistors and Its Suppression by Thermal Annealing in As Overpressure
• W-band Waveguide Amplifier Module with InP-HEMT MMIC for Millimeter-wave Applications
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• Second- and Third-Harmonic Generation of Nd:Glass Laser in Fast Red ITR Organic Crystal Fiber : Waves, Optics and Quantum Electronics
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• Lattice-Mismatched InGaAs Double Heterojunction Bipolar Transistors Grown on GaAs Substrates
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• Experimentally Verified Majority and Minority Mobilities in Heavily Doped GaAs for Device Simulations
• Gas Source MBE Growth of GaSb
• Sn Incorporation in GaAs by Molecular Beam Epitaxy
• Heavily Carbon Doped Base InP/InGaAs Heterojunction Bipolar Transistors Grown by Two-Step Metalorganic Chemical Vapor Deposition

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