Highly Stable Device Characteristics of InP-Based Enhancement-Mode High Electron Mobility Transistors with Two-Step-Recessed Gates

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1999-02-28

著者

• ENOKI Takatomo

  NTT System Electronics Laboratories

• UMEDA Yohtaro

  NTT System Electronics Laboratories

• SUEMITSU Tetsuya

  NTT System Electronics Laboratories

• YOKOYAMA Haruki

  NTT System Electronics Laboratories

• ISHII Yasunobu

  NTT System Electronics Laboratories

• Ishii Y

  Waseda Univ. Tokyo Jpn

• Umeda Y

  Ntt Photonics Lab. Kanagawa Jpn

• Enoki Takatomo

  Ntt Photonics Laboratories

• Yokoyama H

  Kddi R&d Laboratories Inc.

• Ishii Y

  Yamaguchi Univ. Ube‐shi Jpn

• Suemitsu T

  Ntt Photonics Lab. Kanagawa Jpn

• Umeda Yohtaro

  Ntt Photonics Laboratories:(present Address)ntt Electronics Corporation

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