Improved Carrier Confinement by a Buried p-Layer in the AlGaN/GaN HEMT Structure
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概要
- 論文の詳細を見る
The authors have demonstrated AlGaN/GaN HEMTs with lightly-doped buried p-layers under the channel for the first time. A 1.5-μm-gate device showed good pinch-off characteristics, gm of 25 mS/mm, and breakdown voltage of 70-90 V. Carrier confinement by the p-n junction was confirmed by capacitance-voltage measurements. These results indicate the potential of p-layer insertion into GaN-based FETs.
- 社団法人電子情報通信学会の論文
- 2000-12-25
著者
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Shigekawa Naoteru
NTT Photonics Laboratories
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Shigekawa Naoteru
Ntt Science & Core Technology Laboratory
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Shigekawa Naoteru
Institute For Solid State Physics The University Of Tokyo:electro-communication Laboratory Ntt K.k.
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塩島 憲治
Showa Pharmaceutical University
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Shiojima Kenji
Ntt Photonics Laboratories
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Suemitsu T
Ntt Photonics Lab. Kanagawa Jpn
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Suemitsu Tetsuya
Ntt Photonics Laboratories
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