Electroluminescence from am Inlays-Based High Electron Mobility Transistor Designed for High-Speed Operation
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概要
- 論文の詳細を見る
The electroluminescence (EL) of an InGaAs-based high electron mobility transistor (HEMT) designed for highspeed operation was first investigated by cleaving the device and measturing the EL coming from the exposed side of the channel. The gate length and the gate-source separation of the HEMT were 0.1 and 0.55 μm, respectively. We observed the EL attributed to the recombination of the majority electrons and the ionization-induced holes in the InGaAs channel for a drain-source voltage larger than 1.3 V. This means that the EL is useful for evaluatingthe impact ionization in such devices. Furtlnermore we proposed an expression relating the EL intensity to the concentration of the holes at the source edge, and investigated the gate-source voltage (V_GS) dependence of the concentration. We found that their concentration reveals a peak at V_GS =-0.4 V.
- 社団法人応用物理学会の論文
- 1997-07-15
著者
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FURUTA Tomofumi
NTT System Elecrronics Laboratories
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ENOKI Takatomo
NTT System Electronics Laboratories
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Furuta Tomofumi
Ntt System Electronics Laboratories
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Shigekawa Naoteru
Ntt Science & Core Technology Laboratory
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Shigekawa Naoteru
Ntt System Electronics Laboratories
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