Improvement Recessed-Gate Structure for Sub-0.1-μm-Gate InP-Based High Electron Mobility Transistors

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-03-30

著者

• ENOKI Takatomo

  NTT System Electronics Laboratories

• SUEMITSU Tetsuya

  NTT System Electronics Laboratories

• YOKOYAMA Haruki

  NTT System Electronics Laboratories

• ISHII Yasunobu

  NTT System Electronics Laboratories

• Ishii Y

  Waseda Univ. Tokyo Jpn

• Enoki Takatomo

  Ntt Photonics Laboratories

• Yokoyama H

  Kddi R&d Laboratories Inc.

• Ishii Y

  Yamaguchi Univ. Ube‐shi Jpn

• Suemitsu T

  Ntt Photonics Lab. Kanagawa Jpn

関連論文

• Exclusive OR/NOR IC for 40-Gbit/s Clock Recovery Circuit (Special Issue on Ultra-High-Speed IC and LSI Technology)
• Ultrahigh-Speed IC Technologies Using InP-Based HEMTs for Future Optical Communication Systems (Special Issue on Ultra-High-Speed IC and LSI Technology)
• Ultrahigh-Speed Integrated Circuits Using InP-Based HEMTs
• Ultrahigh-Speed Integrated Circuits Using InP-Based High-Electron-Mobility Transistors(HEMTs)
• W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-μm Gate InP-Based HEMTs(Millimeter-Wave Devices,Heterostructure Microelectronics with TWHM2005)
• Monolithic integration of UTC-PDs and InP HBTs using Be ion implantation
• Performance and Stability of MOVPE-Grown Carbon-Doped InP/InGaAs HBT's Dehydrogenated by an Anneal after Emitter Mesa Formation
• Over-100-Gbit/s Multiplexing Operation of InP DHBT Selector IC Designed with High Collector-Current Density
• Design Methods for Utility Max-Min Fair Share Networks(Network)
• Prototype System of SLAMNet : Implementation and Performance Analysis of Signaling-Free Wavelength Path Switching Network(Network)
• Accurate Evaluation of Silicon Planar Doping in InAlAs for InAlAs/InGaAs Modulation Doped Structure Grown by Metal Organic Chemical Vapor Deposition
• 49-GHz Operation of an SCFL Static Frequency Divider Using High-Speed Interconnections and InP-Based HEMTs (Special Issue on Microwave and Millimeter Wave Technology)
• Highly Stable Device Characteristics of InP-Based Enhancement-Mode High Electron Mobility Transistors with Two-Step-Recessed Gates
• 30-nm-Gate InP-Based Lattice-Matched High Electron Mobility Transistors with 350 GHz Cutoff Frequency
• Improvement Recessed-Gate Structure for Sub-0.1-μm-Gate InP-Based High Electron Mobility Transistors
• Novel Gate-Recess Process for the Reduction of Parasitic Phenomena Due to Side-Etching in InAlAs/InGaAs HEMTs
• A Fully Monolithic Integrated 43-Gbit/s Clock and Data Recovery Circuit Using InAlAs/InGaAs/InP HEMTs
• Millimeter-wave MMIC Technologies Exploring F-band Application(Session7: Millimeter-wave and Terahertz Devices)
• Millimeter-wave MMIC Technologies Exploring F-band Application(Session7: Millimeter-wave and Terahertz Devices)
• High Temperature Characteristics of Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Ultrathin Al_2O_3/Si_3N_4 Bilayer
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• Effect of Epitaxial Layer Crystal Quality on DC and RF Characteristics of AlGaN/GaN Short-Gate High-Electron-Mobility Transistors on Sapphire Substrates
• Intrinsic Transit Delay and Effective Electron Velocity of AlGaN/GaN High Electron Mobility Transistors
• Improved Carrier Confinement by a Buried p-Layer in the AlGaN/GaN HEMT Structure
• W-band Waveguide Amplifier Module with InP-HEMT MMIC for Millimeter-wave Applications
• Photoreflectance Characterization of a Channel Layer of InAlAs/InGaAs High Electron Mobility Transistor Wafers
• High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal-Organic Vapor-Phase Epitaxy
• Double-Recess Structure with an InP Passivation Layer for 0.1-μm-Gate InP HEMTs( Heterostructure Microelectronics with TWHM2003)
• The InP-HEMT IC Technology for 40-Gbit/s Optical Communications
• The InP-HEMT IC Technology for 40-Gbit/s Optical Communications
• Frequency Dispersion in Drain Conductance of InAlAs/InGaAs HEMTs and Its Correlation with Impact Ionization
• Gate and Recess Engineering for Ultrahigh-Speed InP-Based HEMTs (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
• High-Resolution Scanning Electron Microscopy Observation of Electrochemical Etching in the Formation of Gate Grooves for InP-Based Modulation-Doped Field-Effect Transistors
• InP-based High-speed Transistors and Their IC Applications
• Delta-Sigma Modulator Using a Resonant-Tunneling Diode Quantizer
• Electroluminescence from am Inlays-Based High Electron Mobility Transistor Designed for High-Speed Operation
• Preparation of Nd-Doped SiO_2 Glasses by Axial Injection Plasma Torch CVD and Their Fluorescence Properties
• Fluorescence and its Nd^ Concentration Dependence of Nd-Doped SiO_2 Glasses Prepared by Plasma Torch CVD
• Preparation of Nd-Doped SiO_2 Glass by Plasma Torch CVD
• 0.05-μm-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects
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• Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs(Millimeter-Wave Devices,Heterostructure Microelectronics with TWHM2005)
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• Metal-Organic Vapor-Phase Epitaxy Growth of InP-Based Resonant Tunneling Diodes with a Strained In0.8Ga0.2As Well and AlAs Barriers
• Metal-Organic Vapor-Phase Epitaxy of Pseudomorphic InAlP/InGaAs High Electron Mobility Transistor Wafers
• Frequency Dispersion in Drain Conductance of InAlAs/InGaAs Hight-Electron Mobility Transisters (HEMTs) and Its Relationship with Impact Ionization
• Al/AlN/InP Metal-Insulator-Semiconductor-Diode Characteristics with Amorphous AlN Films Deposited by Electron-Cyclotron-Resonance Sputtering
• High Temperature Characteristics of Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Ultrathin Al2O3/Si3N4 Bilayer
• Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors

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