49-GHz Operation of an SCFL Static Frequency Divider Using High-Speed Interconnections and InP-Based HEMTs (Special Issue on Microwave and Millimeter Wave Technology)

概要

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49-GHz operation for a state-of-the-art static frequency divider using FETs is achieved with high-performance 0.1-μm-gate InAlAs/InGaAs/InP HEMTs and high-speed double-layer interconnections with a thick low-permittivity BCB inter-layer dielectric film. An experiment shows that the propagation delay for the upper-layer line in the double-layer interconnections is less than half of that for the conventional single-layer interconnections directly on InP-substrate. The frequency divider with the double-layer interconnections is about 20% faster than the conventional one with the single-layer interconnections. A delay time analysis reveals that this speed increase is due to the decrease in interconnection propagation delay.
社団法人電子情報通信学会の論文
1999-07-25