Umeda Y | Ntt Photonics Lab. Kanagawa Jpn

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著作論文

Exclusive OR/NOR IC for 40-Gbit/s Clock Recovery Circuit (Special Issue on Ultra-High-Speed IC and LSI Technology)
Ultrahigh-Speed IC Technologies Using InP-Based HEMTs for Future Optical Communication Systems (Special Issue on Ultra-High-Speed IC and LSI Technology)
Ultrahigh-Speed Integrated Circuits Using InP-Based HEMTs
Ultrahigh-Speed Integrated Circuits Using InP-Based High-Electron-Mobility Transistors(HEMTs)
49-GHz Operation of an SCFL Static Frequency Divider Using High-Speed Interconnections and InP-Based HEMTs (Special Issue on Microwave and Millimeter Wave Technology)
Highly Stable Device Characteristics of InP-Based Enhancement-Mode High Electron Mobility Transistors with Two-Step-Recessed Gates
Upper-bound Frequency for Measuring mm-Wave-Band Dielectric Characteristics of Thin Films on Semiconductor Substrates
High-Frequency Characteristics of SrTiO_3 Thin Films in the mm-Wave Band
Measurement of High-Frequency Dielectric Characteristics in the mm-Wave Band for Dielectric Thin Films on Semiconductor Substrates
High-Frequency Characteristics of SrTiO_3 Thin Films in the mm-Wave Band
The InP-HEMT IC Technology for 40-Gbit/s Optical Communications
The InP-HEMT IC Technology for 40-Gbit/s Optical Communications
Frequency Dispersion in Drain Conductance of InAlAs/InGaAs HEMTs and Its Correlation with Impact Ionization
0.05-μm-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects

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