0.05-μm-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects
スポンサーリンク
概要
- 論文の詳細を見る
In this paper, we discusse the advantages of thinning the channel on short-channel effects for lattice-matched InAlAs/InGaAs high electron mobility transistors (HEMTs) with sub-0.1-μm-long gates with regard to the performance of a 0.05-μm-gate device. To fabricate a sub-0.1-μm gate, the opening shape of the gate-footprint is controlled by using a bilayer dielectric film system and RIE side etching. The device shows a current gain cutoff frequency of 300 GHz and g_m/g_d ratio of 15. Thinning the channel and the barrier down to 100 A improves carrier confinement and subthreshold characteristics and is indispensable for reducing the short-channel effects in the sub-0.1-μm-gate-length region.
- 社団法人応用物理学会の論文
- 1994-01-30
著者
-
TOMIZAWA Masaaki
NTT LSI Laboratories
-
ENOKI Takatomo
NTT LSI Laboratories
-
ISHII Yasunobu
NTT LSI Laboratories
-
Ishii Y
Waseda Univ. Tokyo Jpn
-
Umeda Y
Ntt Photonics Lab. Kanagawa Jpn
-
Enoki Takatomo
Ntt Photonics Laboratories
-
Ishii Y
Yamaguchi Univ. Ube‐shi Jpn
-
UMEDA Yohtaro
NTT LSI Laboratories
-
Umeda Yohtaro
Ntt Photonics Laboratories:(present Address)ntt Electronics Corporation
-
Tomizawa M
Ntt System Electronics Lab. Kanagawa Jpn
-
Tomizawa Masaaki
Ntt Lifestyle And Environmental Technology Labs
関連論文
- Exclusive OR/NOR IC for 40-Gbit/s Clock Recovery Circuit (Special Issue on Ultra-High-Speed IC and LSI Technology)
- Superconducting Three-Terminal Devices Using an InAs-Based Two-Dimensional Electron Gas
- Ultrahigh-Speed IC Technologies Using InP-Based HEMTs for Future Optical Communication Systems (Special Issue on Ultra-High-Speed IC and LSI Technology)
- Ultrahigh-Speed Integrated Circuits Using InP-Based HEMTs
- Ultrahigh-Speed Integrated Circuits Using InP-Based High-Electron-Mobility Transistors(HEMTs)
- W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-μm Gate InP-Based HEMTs(Millimeter-Wave Devices,Heterostructure Microelectronics with TWHM2005)
- Monte Carlo Analysis of Hot Electron Transport and Impact Ionization in Silicon
- Monolithic integration of UTC-PDs and InP HBTs using Be ion implantation
- Performance and Stability of MOVPE-Grown Carbon-Doped InP/InGaAs HBT's Dehydrogenated by an Anneal after Emitter Mesa Formation
- Over-100-Gbit/s Multiplexing Operation of InP DHBT Selector IC Designed with High Collector-Current Density
- InAlAs/InGaAs Heterojunction Bipolar Transistors with an n-doped InGaAs Spacer
- Accurate Evaluation of Silicon Planar Doping in InAlAs for InAlAs/InGaAs Modulation Doped Structure Grown by Metal Organic Chemical Vapor Deposition
- 49-GHz Operation of an SCFL Static Frequency Divider Using High-Speed Interconnections and InP-Based HEMTs (Special Issue on Microwave and Millimeter Wave Technology)
- Highly Stable Device Characteristics of InP-Based Enhancement-Mode High Electron Mobility Transistors with Two-Step-Recessed Gates
- 30-nm-Gate InP-Based Lattice-Matched High Electron Mobility Transistors with 350 GHz Cutoff Frequency
- Improvement Recessed-Gate Structure for Sub-0.1-μm-Gate InP-Based High Electron Mobility Transistors
- Novel Gate-Recess Process for the Reduction of Parasitic Phenomena Due to Side-Etching in InAlAs/InGaAs HEMTs
- A Fully Monolithic Integrated 43-Gbit/s Clock and Data Recovery Circuit Using InAlAs/InGaAs/InP HEMTs
- Millimeter-wave MMIC Technologies Exploring F-band Application(Session7: Millimeter-wave and Terahertz Devices)
- Millimeter-wave MMIC Technologies Exploring F-band Application(Session7: Millimeter-wave and Terahertz Devices)
- High Temperature Characteristics of Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Ultrathin Al_2O_3/Si_3N_4 Bilayer
- DC and RF Characteristics in Al_2O_3/Si_3N_4 Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors
- Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Structure : Low Gate Leakage Current with High Transconductance
- Comparison of AlGaN/GaN insulated gate heterostructure field-effect transistors with ultra-thin Al_2O_3/Si_3N_4 bilayer and with Si_3N_4 single layer
- Al_2O_3/Si_3N_4 Insulated Gate Channel-Doped AlGaN/GaN Heterostructure Field-Effect Transistors with Regrown Ohmic Layers : Low Gate Leakage Current with High Transconductance Operation
- Upper-bound Frequency for Measuring mm-Wave-Band Dielectric Characteristics of Thin Films on Semiconductor Substrates
- High-Frequency Characteristics of SrTiO_3 Thin Films in the mm-Wave Band
- Measurement of High-Frequency Dielectric Characteristics in the mm-Wave Band for Dielectric Thin Films on Semiconductor Substrates
- High-Frequency Characteristics of SrTiO_3 Thin Films in the mm-Wave Band
- W-band Waveguide Amplifier Module with InP-HEMT MMIC for Millimeter-wave Applications
- Statistical Threshold Fluctuations in Si-MOSFETs : Jellium vs. Atomistic Dopant Variations
- General-Purpose Device Simulation System with an Effective Graphic Interface
- High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal-Organic Vapor-Phase Epitaxy
- Double-Recess Structure with an InP Passivation Layer for 0.1-μm-Gate InP HEMTs( Heterostructure Microelectronics with TWHM2003)
- The InP-HEMT IC Technology for 40-Gbit/s Optical Communications
- The InP-HEMT IC Technology for 40-Gbit/s Optical Communications
- Frequency Dispersion in Drain Conductance of InAlAs/InGaAs HEMTs and Its Correlation with Impact Ionization
- Gate and Recess Engineering for Ultrahigh-Speed InP-Based HEMTs (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000)
- High-Resolution Scanning Electron Microscopy Observation of Electrochemical Etching in the Formation of Gate Grooves for InP-Based Modulation-Doped Field-Effect Transistors
- InP-based High-speed Transistors and Their IC Applications
- Delta-Sigma Modulator Using a Resonant-Tunneling Diode Quantizer
- Monte Carlo Study of Charge Injection Transistors (CHINTs)
- Simulation of Emitter Size Effects in the Coupled-Quantum-Well Base Resonant Tunneling Transistor
- Two-dimensional Analysis of Resonant Tunneling Using the Time-dependent Schrodinger Equation
- A System for 3D Simulation of Complex Si and Heterostructure Devices (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD93))
- Photoluminescence of Si_Ge_ Quantum Wells Grown on (100)Si by Low-Pressure Chemical Vapor Deposition
- Preparation of Nd-Doped SiO_2 Glasses by Axial Injection Plasma Torch CVD and Their Fluorescence Properties
- Fluorescence and its Nd^ Concentration Dependence of Nd-Doped SiO_2 Glasses Prepared by Plasma Torch CVD
- Preparation of Nd-Doped SiO_2 Glass by Plasma Torch CVD
- 0.05-μm-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects
- Novel Channel Structures for High Frequency InP-Based HFETs (Special Issue on Heterostructure Electron Devices)
- Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs(Millimeter-Wave Devices,Heterostructure Microelectronics with TWHM2005)
- Monte Carlo Simulation of Response Time for Velocity Modulation Transistors
- Experimentally Verified Majority and Minority Mobilities in Heavily Doped GaAs for Device Simulations
- High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal–Organic Vapor-Phase Epitaxy
- Metal-Organic Vapor-Phase Epitaxy Growth of InP-Based Resonant Tunneling Diodes with a Strained In0.8Ga0.2As Well and AlAs Barriers
- Metal-Organic Vapor-Phase Epitaxy of Pseudomorphic InAlP/InGaAs High Electron Mobility Transistor Wafers
- Frequency Dispersion in Drain Conductance of InAlAs/InGaAs Hight-Electron Mobility Transisters (HEMTs) and Its Relationship with Impact Ionization
- Al/AlN/InP Metal-Insulator-Semiconductor-Diode Characteristics with Amorphous AlN Films Deposited by Electron-Cyclotron-Resonance Sputtering
- High Temperature Characteristics of Insulated-Gate AlGaN/GaN Heterostructure Field-Effect Transistors with Ultrathin Al2O3/Si3N4 Bilayer
- Suppression of short-channel effect in pseudomorphic In0.25Al0.75P/In0.75Ga0.25As high electron mobility transistors