Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs(Millimeter-Wave Devices,<Special Section>Heterostructure Microelectronics with TWHM2005)

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概要

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• A novel fabrication technology for lateral scale-down of sub-100-nm-gate InP-based HEMTs is presented. The fabricated device, whose structure features a reduced distance between the gate and ohmic metals of less than 100nm, exhibits low ohmic resistances and improved DC and RF characteristics with good uniformity across a wafer. A fabricated 130-nm-gate lattice-matched InAlAs/InGaAs HEMT exhibits an extrinsic transconductance of 1.3S/mm. This is 25% increase compared to that of a HEMT fabricated with our conventional process, which is explained by the reduction of R_S. The average current-gain-cutoff-frequency (f_T) of 261GHz was obtained with a small deviation of 9.0GHz. Uniform characteristics with high yield were also confirmed for HEMTs with shorter gates. The average f_T of 290GHz with a standard deviation of 9.3GHz was obtained for 55-nm-gate HEMTs. The developed fabrication technology is promising for improving the electrical characteristics of sub-100-rim-gate InP-based HEMTs and for their integration.

• 社団法人電子情報通信学会の論文
• 2006-07-01

著者

• MATSUZAKI Hideaki

  NTT Photonics Laboratories, NTT Corporation

• ENOKI Takatomo

  NTT Photonics Laboratories, NTT Corporation

• Enoki Takatomo

  Ntt Photonics Laboratories

• MARUYAMA Takashi

  NTT Advanced Technology Corporation

• Tokumitsu Masami

  Ntt Photonics Laboratories

• Matsuzaki Hideaki

  Ntt Photonics Laboratories

• Maruyama Takashi

  Ntt Access Network Service Systems Laboratories Ntt Corporation

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