Simulation of Emitter Size Effects in the Coupled-Quantum-Well Base Resonant Tunneling Transistor
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概要
- 論文の詳細を見る
A resonant tunneling transistor, which has a base in the well region of a coupled-quantum-well structure, was studied using a quantum distributed model. By investigating the relationship between the disappearance of the negative differential resistance and emitter size, a large potential drop near the base electrode was found to be crucial in the disappearance of the negative differential resistance, which causes localization in the collector current. It was shown that the negative characteristics disappear, when the potential drop in the well region parallel to the interface is as large as the difference of first and second resonant energy of electron.
- 社団法人応用物理学会の論文
- 1995-02-28
著者
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TOMIZAWA Masaaki
NTT LSI Laboratories
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YOSHII Akira
NTT LSI Laboratories
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Yoshii A
Ntt Lsi Laboratories
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Taniyama Hideaki
NTT LSI Laboratories
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Tomizawa M
Ntt System Electronics Lab. Kanagawa Jpn
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Tomizawa Masaaki
Ntt Lifestyle And Environmental Technology Labs
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