InAlAs/InGaAs Heterojunction Bipolar Transistors with an n-doped InGaAs Spacer
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-12-15
著者
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Fujimoto Masahiro
Faculty Of Engineering Hiroshima University
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FUKANO Hideki
NTT Opto-electronics Laboratories
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TOMIZAWA Masaaki
NTT LSI Laboratories
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Fujimoto M
Taiyo Yuden Co. Ltd.
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FUJIMOTO Masatomo
NTT Opto-electronics Laboratories
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TAKANASHI Yoshifumi
NTT Opto-electronics Laboratories
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Fukano Hideki
Department Of Electrical Engineering And Electronics Toyohashi University Of Technology
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Tomizawa Masaaki
Ntt Lifestyle And Environmental Technology Labs
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Takanashi Y
Ntt Opto-electronics Laboratories
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