Fujimoto Masahiro | Faculty Of Engineering Hiroshima University
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概要
関連著者
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Fujimoto Masahiro
Faculty Of Engineering Hiroshima University
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Fujimoto M
Taiyo Yuden Co. Ltd.
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Fujimoto Masayuki
Taiyo Yuden Co. Lid.
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FUJIMOTO Masayuki
Taiyo Yuden Co., Ltd.,
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SUZUKI Tatsuya
Research Laboratory for Nuclear Reactors, Tokyo Institute of Technology
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Suzuki Takamasa
Department Of Electronics Nagoya University:r&d Department Nippondenso Co. Ltd.
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Suzuki T
Free Electron Laser Research Institute Inc.
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Suzuki T
Taiyo Yuden Co. Ltd. Gunma Jpn
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Suzuki T
Nhk (japan Broadcasting Corp.) Tokyo
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SUZUKI Toshimasa
Taiyo Yuden Co., Ltd.,
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Suzuki Tatsuro
Department Of Electrical Engineering Shizuoka University
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Suzuki Tatsuhiko
Department Of Electrical Engineering Faculty Of Engineering Science University Of Tokyo
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Suzuki Toshiharu
Sony Sc Ulsi R&d Laboratories
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Suzuki T
Process & Manufacturing Engineering Center Semiconductor Company Toshiba Corporation
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Suzuki T
Department Of Applied Chemistry Faculty Of Technology Tokyo University Of Agriculture And Technology
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Suzuki T
Taiyo Yuden Co. Ltd.
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Suzuki T
Tdk Corp. Chiba Jpn
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SUZUKI Toshimasa
Taiyo Yuden Co Ltd, R&D Center
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NISHI Yuji
Taiyo Yuden Co., Ltd.
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Nishi Yuji
Lnstitute Of Applied Biochemistry University Of Tsukuba
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Nishi Yuji
Taiyo Yuden Co. Ltd.
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SEKIGUCHI Shoichi
Taiyo Yuden Co., Ltd.
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FUJIMOTO Masatomo
NTT Opto-electronics Laboratories
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Sekiguchi S
Taiyo Yuden Co. Ltd.
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Sekiguchi Shoichi
Taiyo Yuden Co. Ltd.
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FUNAKUBO Hiroshi
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School, Tokyo Institut
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Funakubo H
Dep. Of Innovative And Engineered Materials Tokyo Inst. Of Technol.
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Fujii Y
Research Laboratory For Nuclear Reactors Tokyo Institute Of Technology
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Funakubo Hiroshi
Department Of Innovative And Engineered Materials
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舟窪 浩
東工大院総合理工学研究科
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Fujii Yoshihisa
Faculty Of Engineering Hiroshima University
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Fujisawa Hironori
Department Of Electrical Electronic And Computer Engineering Graduate School Of Engineering Hitneji
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Iwazaki Y
Taiyo Yuden Co. Ltd. Gunma
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IWAZAKI Yoshiki
Taiyo Ynden Co., Ltd.
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Suemune I
Hiroshima Univ. Higashihiroshima
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Iwazaki Yoshiki
Taiyo Ynden Co. Ltd.
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Funakubo Hiroshi
Department of Innovative and Engineered Material, Tokyo Institute of Technology, Yokohama 226-8503, Japan
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石川 賢司
静大電子研
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TAGUCHI Tsunemasa
Graduate School of Science and Engineering, Yamaguchi University
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Ishikawa K
Department Of Organic And Polymeric Materials Tokyo Institute Of Technology
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石川 賢司
四日市大学総合政策学部
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Yamada Y
Department Of Quantum Science And Energy Engineering Tohoku University
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Taguchi T
Department Of Materials Science And Engineering Yamaguchi University
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FUKANO Hideki
NTT Opto-electronics Laboratories
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Yamada Y
Akita Univ. Akita Jpn
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SUEMUNE Ikuo
Faculty of Engineering, Hiroshima University
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FUJII Yoshihisa
Faculty of Agriculture, Kyoto University
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Shigematsu Hisao
Fujitsu Laboratories Ltd.
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Taguchi Tsunemasa
Graduate School Of Science And Engineering Yamaguchi University
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Taguchi Tsunemasa
Faculty Of Engineering Yamaguchi University
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MOTOOKA Seiichi
Department of Electronics, Chiba Institute of Technology
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Yamada Y
Department Of Electrical And Electronic Engineering Yamaguchi University
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Yamada Y
Department Of Materials Science And Engineering Yamaguchi University
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FUJIMOTO Masashi
ULSI Device Development Laboratories, NEC Corporation
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HASHIMOTO Takeo
ULSI Device Development Laboratories, NEC Corporation
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KASAMA Kunihiko
ULSI Device Development Laboratories, NEC Corporation
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FUJIMOTO Masao
Department of Internal Medicine, Tono Kosei Hospital
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ISHIKAWA Katsuyuki
Department of Innovative and Engineered Materials, Tokyo Institute of Technology
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SHIBATA Tomohiro
NTT Opto-electronics Laboratories
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NANISHI Yasushi
NTT Opto-electronics Laboratories
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TAKANASHI Yoshifumi
NTT Opto-electronics Laboratories
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Tao Liang
Department Of Electrical Electronics And Computer Engineering. Faculty Of Engineering Chiba Institut
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Motooka S
Department Of Electrical Electronics And Computer Engineering. Faculty Of Engineering Chiba Institut
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Fukano Hideki
Department Of Electrical Engineering And Electronics Toyohashi University Of Technology
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Fujimoto Masao
Department Of Internal Medicine Ja Gifu Tohno-kousei Hospital
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Shibata T
Department Of Electronics Nagoya University
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Nanishi Y
Ntt Opto-electronics Laboratories
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Nanishi Yasushi
Technical Research Laboratory Kansai Paint Co. Ltd.
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Takano N
Waseda Univ. Tokyo Jpn
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Motooka Seiichi
Department Of Electronics
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Hashimoto T
Niigata Univ. Niigata Jpn
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Yamada Yoichi
Faculty Of Education Utsunomiya University
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TAKANO Nobuyuki
Computer Center, Chiba Institute of Technology
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Taguchi Tsunemasa
Department Of Materials Science And Engineering Yamaguchi University
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Takano Nobuyuki
Computer Center Chiba Institute Of Technology
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Kasama K
Ulsi Device Development Laboratory Nec Corporation
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Kasama Kunihiko
Ulsi Device Development Laboratories Nec Corporation
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Suemune Ikuo
Faculty Of Engineering Hiroshima University
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Fujimoto Masashi
Ulsi Device Development Laboratories Nec Corporation
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Takanashi Y
Ntt Opto-electronics Laboratories
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Ishikawa Katsuyuki
Department Of Innovative And Engineered Materials Graduated School Of Science And Engineering Tokyo
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Motooka Seiichi
Department of Electrical, Electronics and Computer Engineering, Chiba Institute of Technology, 2-17-1 Tsudanuma, Narashino, Chiba 275-0016, Japan
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NUKAGA Norimasa
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School, Tokyo Institut
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MITSUYA MASATOSHI
Department of Radiology, Tohoku University School of Medicine
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Funakubo H
Tokyo Inst. Technol. Yokohama Jpn
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TAGUCHI Tsunemasa
Department of Electrical and Electronic Engineering, Yamaguchi University
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FUJII Yoshihisa
Department of Applied Chemistry, Kyushu University
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Shigematsu Hiroshi
Department Of Medicine Keio University School Of Medicine
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FUJIMOTO Masahiro
Department of Human Genetics, Nagasaki University School of Medicine
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TAGUCHI Takao
SORTEC Corporation
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Uchiyama T
Nec Corp. Kanagawa Jpn
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MORITO Kentaro
Taiyo Yuden Co. Ltd.,
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Yamada Yuh
National Research Institute For Metals
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OKUSHI Hideyo
Electrotechnical Laboratory
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SUEMUNE Ikuo
Research Institute for Electronic Science, Hokkaido University
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TOMIZAWA Masaaki
NTT LSI Laboratories
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YAMANISHI Masamichi
Faculty of Engineering, Hiroshima University
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KAN Yasuo
Faculty of Engineering, Hiroshima University
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YAMADA Yoichi
Department of Electrical and Electronic Engineering, Yamaguchi University
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SUEMUNE Ikuo
Department of Physical Electronics, Faculty of Engineering, Hiroshima University
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OSAKA Hirofumi
Department of Physical Electronics, Faculty of Engineering, Hiroshima University
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KURODA Yasuhide
Faculty of Engineering, Hiroshima University
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Fujii Yoshihisa
Department Of Applied Chemistry Kyushu University
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YAMADA Yoichi
Faculty of Engineering, Yamaguchi University
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TAGUCHI Tsunemasa
Faculty of Engineering, Yamaguchi University
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Matsuura Shinobu
Department Of Superconductivity University Of Tokyo
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Uchiyama Takayuki
Ulsi Device Development Laboratories Nec Corporation
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Fujimoto Masahiro
Department Of Electrical Engineering Faculty Of Engineering University Of Tokyo:tokyo Shibaura Elect
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ZHENG Ruisheng
Faculty of Engineering, Yamaguchi University
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Shigematsu Hiroshi
Faculty of Engineering, Yamaguchi University
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Fujimoto Masakatsu
Faculty of Engineering, Yamaguchi University
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FUJIMOTO Masakatsu
On leave from Industrial Technology Institute, Yamaguchi Prefectural Government
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SENDA Kazuhiko
Department of Electrical and Electronic Engineering, Yamaguchi University
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YOSHIKAWA Mitsutoshi
Choshu Industry Co., Ltd.
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KUBO Hachiya
Yamaguchi NF Electronics Co., Lid.
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MATSUURA Seiji
ULSI Device Development Laboratories, NEC Corporation
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YAMAZAKI Tamio
ULSI Device Development Laboratories, NEC Corporation
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WAKABAYASHI Hirotaka
Taiyo Ynden Co., Ltd.
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NAKATA Jyoji
NTT LSI Laboratories
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HOSHI Ken-ichi
Taiyo Yuden Co., Ltd.
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NAKAZAWA Mutsuo
Taiyo Yuden Co., Ltd.
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Nakata J
Ntt Basic Res. Lab. Kanagawa Jpn
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Taguchi T
Department Of Electrical And Electronic Engineering Yamaguchi University
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Matsuura Seiji
Department Of Superconductivity University Of Tokyo
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Hoshi K
Fujitsu Ltd. Kawasaki Jpn
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Zheng Ruisheng
Faculty Of Engineering Yamaguchi University
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Osaka Hirofumi
Department Of Physical Electronics Faculty Of Engineering Hiroshima University
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Taguchi Tsunemasa
Department Of Electrical And Electronic Engineering Faculty Of Engineering Yamaguchi University
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Nakazawa Mutsuo
Taiyo Yuden Co. Ltd.
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Kuroda Yasuhide
Faculty Of Engineering Hiroshima University
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Suemune Ikuo
Department Of Physical Electronics Faculty Of Engineering Hiroshima University
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Morito Kentaro
Taiyo Yuden Co. Ltd.
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Mitsuya Masatoshi
Department Of Innovative And Engineered Materials
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Wakabayashi Hirotaka
Taiyo Ynden Co. Ltd.
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Yoshikawa Mitsutoshi
Choshu Industry Co. Ltd.
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Yamanishi Masamichi
Faculty Of Engineering Hiroshima University
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Yamazaki Tamio
Ulsi Device Development Laboratories Nec Corporation
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Mitsuya Masatoshi
Kanagawa Industrial Technology Research Institute
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YAMANAKA Koji
ULSI Device Development Laboratory, NEC Corporation
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Nukaga N
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Tokyo Institute
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Nukaga Norimasa
Department Of Innovative And Engineered Materials Interdisciplinary Graduate School Of Science And E
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Mitsuya Masatoshi
Kanagawa Industrial Technology Center
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Tomizawa Masaaki
Ntt Lifestyle And Environmental Technology Labs
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Kubo Hachiya
Yamaguchi Nf Electronics Co. Lid.
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Yamanaka Koji
Ulsi Device Development Laboratory Nec Corporation
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Yamada Yoichi
Department Of Cellular Physiology And Signal Transduction Sapporo Medical University School Of Medic
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Senda Kazuhiko
Department Of Electrical And Electronic Engineering Yamaguchi University
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Matsuura Seiji
Ulsi Device Development Laboratories Nec Corporation
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Morita Kentaro
Taiyo Yuden Co., Ltd.
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Uchida Takayuki
ULSI Device Development Laboratories, NEC Corporation
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Nukaga Norimasa
Department of Innovative and Engineered Materials, Interdisciplinary Graduate School, Tokyo Institute of Technology
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Shigematsu Hiroshi
Department of Electrical and Electronic Engineering, Yamaguchi University,
著作論文
- Comparison of Electrical and Optical Properties of n-i-i and p-i-n ZnSSe Heterostructure Diodes
- Iodine Doping in ZnSe in High-Temperature Range by Metalorganic Vapor-Phase Epitaxy
- Lasing Properties and Lasing Mechanism in a ZnSe/ZnSSe Multiple Quantum Well Heterostructure
- Dependence of Exciton-Longitudinal-Optical-Phonon Interaction Energy on Well Width in Cd_Zn_Se/ZnSe Multiple-Quantum Wells
- Reduction of Inhomogeneous Broadening of Exciton Luminescence in Cd_xZn_Se Ternary Alloys and Cd_xZn_Se-ZnSe Multiple Quantum Wells Grown by Molecular-Beam Epitaxy under Se-Excess Supply
- Reticle Critical Dimension Latitude for Fabrication of 0.18 μm Line Patterns
- Defect Structure of Heteroepitaxial SnO_2 Thin Films Grown on TiO_2 Substrates : Surfaces, Interfaces, and Films
- Local Epitaxial Growth of (103) One-Axis-Oriented SrBi_2Ta_2O_9 Thin Films Prepared at Low Deposition Temperature by Metalorganic Chemical Vapor Deposition and Their Electrical Properties
- Effect of Nonstoichiometry on Microstructure of Epitaxially Grown BaTiO_3 Thin Films
- Thermal Stability of Artificial SrTiO_3/SrO Superlattice Epitaxially Grown on SrTiO_3 Single Crystal
- Solid Solution of Epitaxially Grown(Sr, Mg)TiO_3 Thin Films
- Electrical Characterization of SrTiO_3 Thin Films Grown on Nb-Doped SrTiO_3 Single Crystals
- Artificial SrTiO_3/SrO Superlattices by Pulsed Laser Deposition
- Interface and Domain Structures of (116)-Oriented SrBi_2Ta_2O_9 Thin Film Epitaxially Grown on (110) SrTiO_3 Single Crystal
- Interface and Defect Structures of (001)-Oriented SrBi_2Ta_2O_9 Thin Film Epitaxially Grown on (001) SrTiO_3 Single Crystal
- A Rutherford Backscattering Spectroscopic Study of the Aluminum Antimonide Oxidation Process in Air
- Surface Currents in InP/InGaAs Heterojunction Bipolar Transistors Produced by Passivation Film Formation
- Cu Multiply Twinned Particle Precipitation in Low-Temperature Fired Ni-Zn-Cu Ferrite
- InAlAs/InGaAs Heterojunction Bipolar Transistors with an n-doped InGaAs Spacer
- Study on the Optimal Distance between the Sand Surface and the Sensors Array for the Measurement of Sand Moisture
- Analysis and Measurement of Reflectance of Moist Sand Surface Using a Four Transmitter Array
- Low-Temperature Si Surface Cleaning by Hydrogen Beam with Electron-Cyclotron-Resonance Plasma Excitation
- Critical Dimension Controllability Evaluation Based on Process Error Distribution for 150 nm Devices