YAMANISHI Masamichi | Faculty of Engineering, Hiroshima University
スポンサーリンク
概要
関連著者
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YAMANISHI Masamichi
Faculty of Engineering, Hiroshima University
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Yamanishi Masamichi
Faculty Of Engineering Hiroshima University
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Suemune Ikuo
Faculty Of Engineering Hiroshima University
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SUEMUNE Ikuo
Faculty of Engineering, Hiroshima University
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KAN Yasuo
Faculty of Engineering, Hiroshima University
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Kan Yasuo
Department Of Physical Electronics Hiroshima University:(present Address) Central Research Labs. Sha
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Suemune I
Hiroshima Univ. Higashihiroshima
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Honda Y
Department Of Electronics Nagoya University
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Honda Yoshio
Department Of Electronics School Of Engineering Nagoya University Chikusa-ku Nagoya
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Honda Y
Tokyo Inst. Technol. Tokyo Jpn
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Honda Yoshio
Department Of Electronics Nagoya University
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Honda Y
Hitachi Ltd. Kokubunji‐shi Jpn
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Honda Y
Tsukuba Research Laboratory Sumitomo Chemical Co. Ltd.
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HONDA Yoshiaki
Faculty of Engineering, Hiroshima University
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Kan Yasuo
Faculty Of Engineering Hiroshima University
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KISHIMOTO Akihiro
Faculty of Engineering, Hiroshima University
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HAMAOKA Kazuhiko
Faculty of Engineering, Hiroshima University
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KURODA Yasuhide
Faculty of Engineering, Hiroshima University
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Kuroda Yasuhide
Faculty Of Engineering Hiroshima University
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Kishimoto A
Faculty Of Engineering Hiroshima University
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Hamaoka Kazuhiko
Faculty Of Engineering Hiroshima University
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MASATO Hiroyuki
Electronics Research Laboratory, Matsushita Electronics Corporation
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Fujii Y
Research Laboratory For Nuclear Reactors Tokyo Institute Of Technology
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KOUI Tomoaki
Faculty of Engineering, Hiroshima University
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FUJII Yoshihisa
Faculty of Agriculture, Kyoto University
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NAKANISHI Kazuya
NTT System Electronics Laboratories
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Fujii Yoshihisa
Faculty Of Engineering Hiroshima University
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Yamamoto H
Sharp Corp. Nara Jpn
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Nakanishi K
Ritsumeikan Univ. Kusatsu Jpn
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Yamamoto H
College Of Science And Technology Nihon University
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YAMAMOTO Hiroaki
Faculty of Engineering, Hiroshima University
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YUKUTAKE Kazutoshi
Faculty of Engineering, Hiroshima University
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Koui Tomoaki
Faculty Of Engineering Hiroshima University
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Kanda T
Bu Electronic Materials Cariant (japan) K.k.
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MASATO Hiroyuki
Faculty of Engineering, Hiroshima University
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NAKANISHI Koichiro
Faculty of Engineering, Hiroshima University
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Nakanishi Koichiro
Faculty Of Engineering Osaka University:(present Address)central Research Laboratory Mitsubishi Elec
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Yukutake Kazutoshi
Faculty Of Engineering Hiroshima University
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Masato H
Electronics Research Laboratory Matsushita Electronics Corporation
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Yamamoto Hiroaki
Faculty Of Engineering Shinshu University
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Fujimoto Masahiro
Faculty Of Engineering Hiroshima University
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YAO Takafumi
Electrotechnical Laboratory
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YASUHIRA Naoki
Faculty of Engineering, Hiroshima University
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KUNITSUGU Yasuhiro
Faculty of Engineering, Hiroshima University
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OHMI Koutoku
yhe Department of Electrical and Electronic Engineering, Tottori University
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Fujimoto M
Taiyo Yuden Co. Ltd.
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Ohmi Koutoku
Department Of Physical Electronics Faculty Of Engineering Hiroshima University
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Yasuhira Naoki
Faculty Of Engineering Hiroshima University:(present Address)kobe Steel Ltd.
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YAMADA Kouichi
Faculty of Engineering, Hiroshima University
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KANDA Takahsi
Faculty of Engineering, Hiroshima University
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OHMI Koutoku
Faculty of Engineering, Hiroshima University
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KANDA Takashi
Faculty of Engineering, Hiroshima University
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Yao Takafumi
Electrical Laboratory
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Kunitsugu Yasuhiro
Faculty Of Engineering Hiroshima University:mitsubishi Electric Co. Ltd.
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Yamada Kouichi
Faculty Of Engineering Hiroshima University
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Uesugi Norio
Faculty Of Engineering Hiroshima University
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KAN Yasu
Faculty of Engineering, Hiroshima University
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Kan Yasu
Faculty Of Engineering Hiroshima University
著作論文
- Continuous-Wave Operation of a Lateral Current Injection Ridge Waveguide AlGaAs/GaAs Laser with a Selectively-Doped Heterostructure
- In-Situ RHEED Monitoring of Hydrogen Plasma Cleaning on Semiconductor Surfaces : Beam-Induced Physics and Chemistry
- In-Situ RHEED Monitoring of Hydrogen Plasma Cleaning on Semiconductor Surfaces
- Incidence Angle Dependence in Hydrogen Plasma Processing of Semiconductor Surfaces : Beam Induced Physics and Chemistry
- Lasing Properties and Lasing Mechanism in a ZnSe/ZnSSe Multiple Quantum Well Heterostructure
- Investigation of Linearity of Photoacoustic Characteristics on Semiconductors Measured by Michelson Interferometry : Photoacoustic Spectroscopy
- Electric Field Effect on Subband State Transitions Peaks in the Photoluminescence from a GaAlAs Quantum Well Structure
- Characterization of Nitrogen-Doped ZnSe and ZnS_Se_ Films Grown by Metal-Organic Vapor-Phase Epitaxy : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
- Control of ZnSe Film Stoichiometry at ZnSe/GaAs Interface Grown by MOCVD
- High Output Power (>20 W) and High Quantum Efficiency in a Photopumped ZnSe/ZnSSe Blue Laser Operating at Room Temperature
- Near-Room-Temperature Photopumped Blue Lasers in ZnS_xSe_/ZnSe Multilayer Structures
- Increase in Nonradiative Recombination Lifetimes in Semi-Insulating GaAs Observed by a Photoacoustic Technique