Control of ZnSe Film Stoichiometry at ZnSe/GaAs Interface Grown by MOCVD
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1986-10-20
著者
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SUEMUNE Ikuo
Faculty of Engineering, Hiroshima University
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YAMANISHI Masamichi
Faculty of Engineering, Hiroshima University
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KAN Yasuo
Faculty of Engineering, Hiroshima University
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OHMI Koutoku
yhe Department of Electrical and Electronic Engineering, Tottori University
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YUKUTAKE Kazutoshi
Faculty of Engineering, Hiroshima University
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Kan Yasuo
Department Of Physical Electronics Hiroshima University:(present Address) Central Research Labs. Sha
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Ohmi Koutoku
Department Of Physical Electronics Faculty Of Engineering Hiroshima University
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Kanda T
Bu Electronic Materials Cariant (japan) K.k.
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OHMI Koutoku
Faculty of Engineering, Hiroshima University
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KANDA Takashi
Faculty of Engineering, Hiroshima University
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Kan Yasuo
Faculty Of Engineering Hiroshima University
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Yukutake Kazutoshi
Faculty Of Engineering Hiroshima University
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Yamanishi Masamichi
Faculty Of Engineering Hiroshima University
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Suemune Ikuo
Faculty Of Engineering Hiroshima University
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