Transient Response of Photoluminescence for Electric Field in a GaAs/Al_<0.7>Ga_<0.3>As Single Quantum Well : Evidence for Field-Induced Increase in Carrier Life Time
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1985-08-20
著者
-
YAMANISHI Masamichi
Department of Quantum Matter, Graduate School of Advanced Sciences of Matter, Hiroshima University
-
KAN Yasuo
Faculty of Engineering, Hiroshima University
-
SUEMUNE Ikuo
Department of Physical Electronics, Faculty of Engineering, Hiroshima University
-
Kan Yasuo
Department Of Physical Electronics Hiroshima University:(present Address) Central Research Labs. Sha
-
Usami Yuichi
Department of Physical Electronics, Faculty of Engineering, Hiroshima University
-
Usami Yuichi
Department Of Physical Electronics Faculty Of Engineering Hiroshima University
-
Suemune Ikuo
Department Of Physical Electronics Faculty Of Engineering Hiroshima University
-
Yamanishi Masamichi
Department Of Electrical Engineering College Of Engineering University Of Osaka Prefecture
-
Usami Yuichi
Department of Operative Dentistry and Endodontics, Niigata UniversitySchool of Dentistry
関連論文
- THz Electromagnetic Wave Radiation from Bulk Semiconductor Microcavities Excited by Short Laser Pulses : Optics and Quantum Electronics
- Incidence Angle Dependence in Hydrogen Plasma Processing of Semiconductor Surfaces : Beam Induced Physics and Chemistry
- Iodine Doping in ZnSe in High-Temperature Range by Metalorganic Vapor-Phase Epitaxy
- Lasing Properties and Lasing Mechanism in a ZnSe/ZnSSe Multiple Quantum Well Heterostructure
- Electric Field Effect on Subband State Transitions Peaks in the Photoluminescence from a GaAlAs Quantum Well Structure
- Characterization of Nitrogen-Doped ZnSe and ZnS_Se_ Films Grown by Metal-Organic Vapor-Phase Epitaxy : III-V Compound Semiconductors Devices and Materials(Solid State Devices and Materials 1)
- Lattice-Mismatch Enhanced Diffusion at a ZnSe/GaAs Interface - Increase of Thermal Stability in a Lattice-Matching System
- Control of ZnSe Film Stoichiometry at ZnSe/GaAs Interface Grown by MOCVD
- High Output Power (>20 W) and High Quantum Efficiency in a Photopumped ZnSe/ZnSSe Blue Laser Operating at Room Temperature
- Near-Room-Temperature Photopumped Blue Lasers in ZnS_xSe_/ZnSe Multilayer Structures
- Ultrafast Response Evaluation of Virtual Excitation by Off-Resonant Optical Pulse Mixing in GaAs/AlGaAs Quantum Well Structures
- High-Speed Intensity Modulation by Quantum-Confined Field Effect Combined with Modulation of Injection Current in Light-Emitting Triodes
- Optical Nonlinearity Caused by Charge-Induced Field Screening in DC-Biased Quantum Well Structures
- Dynamic Switching Characteristics of Photoluminescence by an Electric Field in AlGaAs Quantum Well Structures
- A 140 ps Optical Pulse Generation by Field-Induced Gain Switching in a Photo-Excited Quantum Well Laser
- Electroreflectance Spectra and Field-Induced Variation in Refractive Index of a GaAs/AlAs Quantum Well Structure at Room Temperature
- Transient Response of Photoluminescence for Electric Field in a GaAs/Al_Ga_As Single Quantum Well : Evidence for Field-Induced Increase in Carrier Life Time
- Efficient Phase Conjugation Wave Generation from a GaAs Single Quantum Well in a Microcavity
- Ultrastructural changes of collagen fibers on cut and acid-treateddentin surfaces
- Subsurface morphology of smear layer on cut dentin
- Evaluation of Carrier Dynamics in n-Al_xGa_As Films by Terahertz Time-Domain Spectroscopy with Characteristic-Matrix Analysis
- Generation of Heralded Twin-Photons in a Series-Coupled Mesoscopic Light-Emitting Diode System
- Photon-Number Squeezing in a Light-Emitting Diode Driven by a Constant-Voltage Source : Pump Regulation by the Non-Coulombic Effect
- Metal-Semiconductor Electroluminescent Diodes in ZnO Single Crystal
- An Anisotropy of Gain in N_2-Laser Pumped GaAs under Applied Electric Field
- Photoluminescence from Uudoped GaAs under Applied Electric Field : The Transition Mechanism at High Excitation Levels near 77 K
- A New Two-dimensional DFB Laser with Distributed Bragg and Acousto-Optic Reflectors : B-7: SEMICONDUCTOR LASERS (II)
- Observation of Ultraviolet-Luminescence from the ZnO MIS Diodes
- Emission from an Optically Pumped GaAs under Drifting Field
- Comment on Polarization Dependent Momentum Matrix Elements in Quantum Well Lasers
- Oscillation of Two-Dimensional Modes in Transverse-Distributed-Feedback Cavity Lasers
- Two-Dimensionally Collimated Output Beam from GaAlAs Diode Lasers with Two-Dimensional Distributed Bragg Reflectors
- Poto-Response Characteristics of Electrophtographic Plates in Nanosecond Periods
- 4-5 μm Emissions from 1.3-μm and 1.5-μm InGaAsP/InP Lasers : Evidence for Excitations in Split-Off Valence Band
- Generation Mechanisms of Current-Injection-Induced Acoustic (CIA) Signals in Semiconductor Lasers : Photo-Acoustic Spectroscopy
- Hole-Burnings Observed at High Energy Tails in Spontaneous Emission Spectra from 1.3 μm-InGaAsP/InP Lasers
- Analysis of Intrinsic Saturable Absorption in InGaAsP/InP Diode Lasers
- Investigation of 1.3-μm InGaAsP/InP Lasers by the Measurement of Current-Injection-Induced Acoustic (CIA) Signals
- Observation of Acoustic Signals from Semiconductor Lasers
- Beating Structure on the Spectrally Resolved Four-Wave Mixing: Polarization Dependence : Condensed Matter: Electronic Properties, etc.
- Contribution of the Imaginary Part of Photoelastic Constants to Resonant Brillouin Scattering in CdS
- Binding Energies of Wannier Excitons in Ga_Al_xAs Quantum-Well Wires
- Drift Mobility Measurement of Se Single Crystal by Light Pulse Technique
- (Invited) GaAs Acoustic Distributed Feedback Lasers : B-4: LASERS (1)
- Discrete Shifts of Absorption and Emission Lines by Individual Electron-Hole Pair Excitation in DC-Biased Quantum Box Structures
- Quantum Mechanical Size Effect Modulation Light Sources : A New Field Effect Semiconductor Laser or Light Emitting Device
- 3 dB Wideband Squeezing in Photon Number Fluctuations from a Light Emitting Diode
- Amplification of Transverse Acoustic Surface Waves under Transverse Magnetic Field
- Interaction between Surface Elastic Waves and Drifting Carriers in Layered System
- Line Shape Functions of Quantum-Box Lasers
- A New Type of Surface Acoustic Waveguide
- High-Speed Semiconductor Light Emitters Based on Quantum-Confined Field Effect: Developed Devices and Inclusion of Quantum Microcavities
- Evaluation of Carrier Dynamics in $n$-AlxGa1-xAs Films by Terahertz Time-Domain Spectroscopy with Characteristic-Matrix Analysis