Investigation of 1.3-μm InGaAsP/InP Lasers by the Measurement of Current-Injection-Induced Acoustic (CIA) Signals
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概要
- 論文の詳細を見る
1.3-μm InGaAsP/InP buried-hetero structure (BH) and oxide-stripe semiconductor lasers were investigated by the measurement of current-injection-induced acoustic (CIA) signals. The results show that gain suppression occurs well below the threshold current and that a large internal optical loss exists and is saturated at about threshold regardless of the laser structure.
- 社団法人応用物理学会の論文
- 1981-09-05
著者
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Mikoshiba Nobuo
Research Institute Of Electrical Communication Tohoku University
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Suemune Ikuo
Department Of Physical Electronics Faculty Of Engineering Hiroshima University
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Yamanishi Masamichi
Department Of Physical Electronics Hiroshima University
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Yamanishi Masamichi
Department Of Electrical Engineering College Of Engineering University Of Osaka Prefecture
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Mikoshiba Nobuo
Research Institute Of Electorical Communication Tohoku University
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