Silicon Nitride Films with Low Hydrogen Content, Low Stress, Low Damage and Stoichiometric Composition by Photo-Assisted Plasma CVD
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1989-12-20
著者
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Masu Kazuya
Integrated Research Institute
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Masu Kazuya
Research Institute Of Electrical Communication Tohoku University
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TSUBOUCHI Kazuo
Research Institute of Electrical Communication, Tohoku University
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Mikoshiba N
Research Institute Of Electrical Communication Tohoku University:(present Address) Hewlett-packard L
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Mikoshiba Nobuo
Research Institute Of Electrical Communication Tohoku University:(present Address) Hewlett-packard L
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Mikoshiba Nobuo
Research Institute Of Electrical Communication Tohoku University
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Suzuki Nobuhiro
The Faculty Of Engineering Tokyo Institute Of Technology
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Yoshikawa T
Division Of Mechanical Engineering Department Of Mechanical Science And Bioengineering Graduate Scho
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Tsubouchi K
Tohoku Univ. Sendai Jpn
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Tsubouchi Kazuo
Research Institute Of Electrical Communicaiton Tohoku University
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Suzuki N
Hitachi Ltd. Tokyo Jpn
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SUZUKI Nobumasa
Production Engineering Research Laboratory, Canon Inc.
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YOSHIKAWA Toshiaki
Production Engineering Research Laboratory, Canon Inc.
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Yoshikawa Toshiaki
Production Engineering Research Laboratory Canon Inc.
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Suzuki Nobumasa
Production Engineering Research Laboratory Canon Inc.
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Mikoshiba Nobuo
Research Institute Of Electorical Communication Tohoku University
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TSUBOUCHI Kazuo
Research Institute of Electric Communication (RIEC), Tohoku University
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