Low-Temperature Metal-Oxide-Semiconductor Field-Effect Transistor Operation by Temperature Scaling Theory
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概要
- 論文の詳細を見る
We have demonstrated 77 K operation of deep-submicron metal-oxide-semiconductor field-effect transistors (MOSFET's) based on the temperature scaling concept. The measured subthreshold swing and the threshold voltage for the 77 K devices designed using the temperature scaling theory are both found to be scaled down to 1/4(≃77 K/300 K) as compared with those for 300 K devices. The threshold voltage shifts and the subthreshold swing shifts due to short-channel effects are also found to be scaled down by a factor of 1/4. Furthermore, it is demonstrated that a 0.18 μm 77 K MOSFET designed using the temperature-dimension combination scaling theory has the scaled characteristics of subthreshold swing and threshold voltage with no degradation due to short-channel effects. The temperature-dimension combination scaling theory provides a design guideline for 77 K deep-submicron MOSFET's.
- 社団法人応用物理学会の論文
- 1993-01-30
著者
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Masu K
Research Institute Of Electrical Communication Tohoku University
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Masu Kazuya
Integrated Research Institute
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Masu Kazuya
Research Institute Of Electrical Communication Tohoku University
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TSUBOUCHI Kazuo
Research Institute of Electrical Communication, Tohoku University
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Masu Kazuya
東工大
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YOKOYAMA Michio
Research Institute of Electrical Communication, Tohoku University
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Tsubouchi K
Tohoku Univ. Sendai Jpn
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Yokoyama M
Kawasaki Heavy Ind. Ltd. Chiba Jpn
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Tsubouchi Kazuo
Research Institute Of Electrical Communicaiton Tohoku University
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YI You-Wen
Research Institute of Electrical Communication, Tohoku University
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Yi You-wen
Hewlett-packard Laboratories Japan
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Hidaka T
Shonan Inst. Technol. Kanagawa Jpn
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HIDAKA Tetsuya
Research Institute of Electrical Communication, Tohoku University
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TSUBOUCHI Kazuo
Research Institute of Electric Communication (RIEC), Tohoku University
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