4-5 μm Emissions from 1.3-μm and 1.5-μm InGaAsP/InP Lasers : Evidence for Excitations in Split-Off Valence Band
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概要
- 論文の詳細を見る
4-5 μm wavelength emissions associated with recombinations of holes in the split-off valence band and electrons in the light-hole valence band were observed from 1.3 μm and 1.5 μm InGaAsP/InP lasers. Hole populations in the split-off valence band are dramatically increased with the current level and temperature rise. It was deduced from their current dependence as well as that of acoustic signals so far reported that Auger recombination is a most probable mechanism up to about half of the threshold current, and that intervalence band absorption and its saturation behavior mainly influences the lasing characteristics above that current.
- 社団法人応用物理学会の論文
- 1983-09-20
著者
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Mikoshiba N
Research Institute Of Electrical Communication Tohoku University:(present Address) Hewlett-packard L
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Mikoshiba Nobuo
Research Institute Of Electrical Communication Tohoku University
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Suemune Ikuo
Department Of Physical Electronics Faculty Of Engineering Hiroshima University
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Yamanishi Masamichi
Department Of Physical Electronics Hiroshima University
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Yamanishi Masamichi
Department Of Electrical Engineering College Of Engineering University Of Osaka Prefecture
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NONOMURA Kazuhiro
Department of Physical Electronics, Hiroshima University
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Nonomura Kazuhiro
Department Of Physical Electronics Hiroshima University:(present Address)fujitsu Ltd.
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Mikoshiba Nobuo
Research Institute Of Electorical Communication Tohoku University
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