Voltage-Dependence of Scanning Tunneling Microscopy on Titanium Surface in Air

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1986-06-20

著者

• Okada T

  Joint Research Center For Atom Technology (jrcat)

• Mikoshiba N

  Research Institute Of Electrical Communication Tohoku University:(present Address) Hewlett-packard L

• Mikoshiba Nobuo

  Research Institute Of Electrical Communication Tohoku University:(present Address) Hewlett-packard L

• Mikoshiba Nobuo

  Research Institute Of Electrical Communication Tohoku University

• MORITA Seizo

  Research Institute of Electrical Communication, Tohoku University

• OKADA Takao

  Olympus Optical Co., Ltd.

• ISHIGAME Yuri

  Research Institute of Electrical Communication, Tohoku University

• Ohta Tsuneaki

  Optoelectronics Joint Research Laboratory

• Ohta Tuneaki

  Oki Electric Industry Co. Ltd.

• Ohta T

  Matsushita Electric Industrial Co. Ltd. Osaka Jpn

• Okada T

  Faculty Of Science Gakushuin University

• Sato C

  Hokkaido Inst. Public Health Sapporo Jpn

• Morita Seizo

  Research Institute Of Electrical Communication Tohoku University

• Ishigame Yuri

  Research Institute Of Electrical Communication Tohoku University

• SATO Chiaki

  Olympus Optical Co., Lid.

• Mikoshiba Nobuo

  Research Institute Of Electorical Communication Tohoku University

• Sato Chiaki

  Olympus Optical Co. Lid.

関連論文

• Anomalous Three-LO-Phonon Assisted Cyclotron Resonance with Spin-Flip Transitions in n-InSb
• Observation of X-Ray Diffraction Spots from the (√×√)R30°Bi Structure on the Si(111) Surface under the Condition of Large Incidence Angle
• Contact Electrification on Thin SrTiO_3 Film by Atomic Force Microscope
• Submillimeter-Wave Response of Nb-YBaCuO Point-Contact Josephson Junctions Using YBaCuO Thin Films Prepared by CVD
• Structural and Electronic Properties of Adsorbed Thiophene on Cu(111) Studied by S K-Edge X-Ray Absorption Spectroscopy
• Local Structures of Carbon Thin Films Synthesized by the Hot Filament Chemical Vapor Deposition Method X-Ray-Absorption Near-Edge Structure and Raman Spectroscopic Studies
• Temperature-Dependent Br K-Edge EXAFS Study on AgBr_xCl_ Solid Solutions
• Applicability of the Soft X-Ray Standing-Wave Method to Surface Structure Determination
• XANES and Raman Spectroscopic Studies of Diamond Films Synthesized by Hot Filament CVD
• Bromine Adsorption on Supported Palladium Ultrafine Particles Studied by Br K-Edge EXAFS Spectroscopy
• Surface Structure of N/Pd(100)-c(2 × 2) Determined by Tensor Low Energy Electron Diffraction Analysis
• Structure, Composition, and Vibrational Property of Iodine-Doped Polyvinyl Alcohol Studied by Temperature-Dependent I K-Edge Extended X-Ray-Absorption Fine Structure
• Local Structures of RbBr_xCl_ and CuBr_xCl_ Solid Solutions Studied by Temperature-Dependent Br K-Edge Extended X-Ray-Absorption Fine-Structure Spectroscopy
• Simulation of Shapiro Steps in a Josephson Junction Based on the Microscopic Theory of the Tunnel Junction
• Anomalous Corrugation Height of Atomically Resolved AFM Images of a Graphite Surface
• Simultaneous Observation of Atomically Resolved AFM/STM Images of a Graphite Surface
• Surface Conductance of Metal Surfaces in Air Studied with a Force Microscope
• Submillimeter-Wave Response of Nb-YBaCuO Point-Contact Josephson Junctions : Electrical Properties of Condensed Matter
• Damping Factor of the Riedel Peak in Brikge-Type Josephoson Junctions
• Frequency Dependence of the Submillimeter-Wave Response in the Tunnel-Type and Bridge-Type Josephson Junctions
• Correlation between Types of Junction and Submillimeter-Wave Responses in Point-Contact Josephson Junctions
• Frequency Dependence of the ac Josephson Effect in Nb Point Contacts in the Submillimeter-Wave Region
• Computer Simulation of Vortex Motion in a Josephson Junction Induced by Phonon Injection
• Vortex Motion in a Josephson Junction Induced by Phonon Injection
• Construction of a Scanning Tunneling Microscope for Electrochemical Studies
• Multilayer Piezoelectric Actuators for Scanning Tunneling Microscope : High Power Ultrasonics
• X-Ray Mask Distortion Induced in Back-Etching Preceding Subtractive Fabrication: Resist and Absorber Stress Effect
• Reduction of X-Ray Irradiation-Induced Pattern Displacement of SiN Membranes Usirng H^+ Ion Implantation Technique
• New Computed Tomography Algorithm of Electrostatic Force Microscopy Based on the Singular Value Decomposition Combined with the Discrete Fourier Transform
• Simulated Computed Tomography for the Reconstruction of Vacancies Using an Atomic Force Microscope Image
• Stability of Densely Contact-Electrified Charges on Thin Silicon Oxide in Air
• Feasibility Study on a Novel Type of Computerized Tomography Based on Scanning Probe Microscope
• Phase Transition of Contact-Electrified Negative Charges on a Thin Silicon Oxide in Air
• Parameter Dependence of Stable State of Densely Contact-Electrified Electrons on Thin Silicon Oxide
• Potentiometry Combined with Atomic Force Microscope
• Charge Storage on Thin SrTiO_3 Film by Contact Electrification ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
• Observation of GaAs(110) Surface by an Ultrahigh-Vacuum Atomic Force Microscope
• Atomically Resolved Image of Cleaved GaAs(110) Surface Observed with an Ultrahigh Vacuum Atomic Force Microscope
• Weak Localization in Graphite
• Temperature Dependence of the Inelastic Scattering Time in Metallic n-GaAs
• Determination of Physical Parameters of the Anderson Localization in Metallic n-InSb
• Effects of the Anderson Localization on Magnetoconductivity in Metallic n-GaAs
• In Situ Imaging of Electrochemical Deposition of Ag on Au(111)
• Voltage-Dependence of Scanning Tunneling Microscopy on Titanium Surface in Air
• Atomic Images of Disordered Regions in Graphite Crystals Obtained with Scanning Tunneling Microscope
• Atomic Corrugation of Kish Graphite in Air Measured with Scanning Tunneling Microscope
• Single Crystallization of Aluminum on SiO_2 by Thermnal Annealing and Observation with Scanning μ-RHEED Microscope
• Development of Scanning μ-RHEED Microscopy for Imaging Polycrystal Grain Structure in LSI (SOLID STATE DEVICES AND MATERIALS 1)
• Theoretical Analysis for a New Package Concept : High-Speed Heat Removal for VLSI Using an AlN Heat-Spreading Layer and Microchannel Fin
• Selective Ge CVD as a Via Hole Filling Method and Self-Aligned Impurity Diffusion Microsource in Si Processing (SOLID STATE DEVICES AND MATERIALS 1)
• Time Dependent Dielectric Breakdown of Thin Silicon Oxide Using Dense Contact Electrification
• Time Evolution of Contact-Electrified Electron Dissipation on Silicon Oxide Surface Investigated Using Noncontact Atomic Force Microscope
• Spatial Distributions of Densely Contact-Electrified Charges on a Thin Silicon Oxide
• Dissipation of Contact Electrified Electrons on Dielectric Thin films with Silicon Substrate
• Aluminum Nitride Epitaxially Grown on Silicon: Orientation Relationships
• In Situ Observation of Electromigration in Cu Film Using Scanning μ-Reflection High-Energy Electron Diffraction Microscope
• Planarized Deposition of High-Quality Silicon Dioxide Film by Photoassisted Plasma CVD at 300℃ Using Tetraethyl Orthosilicate
• Evaluation of LaB_6 Thin Film as Low-Work-Function Gate for MOSFET Operated at Low Temperature
• Silicon Nitride Films with Low Hydrogen Content, Low Stress, Low Damage and Stoichiometric Composition by Photo-Assisted Plasma CVD
• Temperature-Scaling Theory for Low-Temperature-Operated MOSFET with Deep-Submicron Channel : Semiconductors and Semiconductor Devices
• Pyrolysis and Photolysis of Trimethylaluminum
• Nondestructive and Noncontact Observation of Microdefects in GaAs Wafers with a New Photo-Thermal-Radiation Microscope
• Nondestructive and Noncontact Observation of Microdefects in GaAs Wafers with a New Photo-Thermal-Radiation Microscope
• Nondestructive and Noncontact Evaluation of Semiconductors by Photothermal Radiometry : Photoacoustic Spectroscopy
• Observation of Nonradiative Processes in Benzene Vapor by Photoacoustic Spectroscopy
• Quasi-Nondestructive Observation of Oxidation-Induced Stacking Faults in Silicon by Photoacoustic Topography
• Images of Barrier Layer of Anodic Aluminum Oxide in Air Obtained with Scanning Tunneling Microscope
• Phonon-Assisted Cyclotron Resonance Strongly Dependent on Surface Condition in n-InSb
• Nonlinear Interaction of Surface Acoustic Waves with the Josephson Junction
• Oxide Growth of Tin Films by Modified rf Plasma Oxidation Method
• Convolution and Acoustoelectric Effect by Elastic Surface Waves in Coupled Semiconductor-Piezoelectric System
• Oscillation of Two-Dimensional Modes in Transverse-Distributed-Feedback Cavity Lasers
• Heat Treatment and Steaming Effects of Silicon Oxide upon Electron Dissipation on Silicon Oxide Surface
• Contact Electrification on Thin Silicon Oxide in Vacuum
• Spatial Distribution and Its Phase Transition of Densely Contact-Electrified Electrons on a Thin Silicon Oxide
• Stable-Unstable Phase Transition of Densely Contract-Electrified Electrons on Thin Silicon Oxide
• Reproducible and Controllable Contact Electrification on a Thin Insulator
• Tunneling-Type Temperature Dependence of Critical Current in Nb-Sn Point Contact
• Effect of the Shunt Capacitance on the ac Josephson Effect in Nb Point Contacts
• Peak Shifts ot the Photo-Induced Magnetophonon Resonance in n-InSb at 4.2 K
• 4-5 μm Emissions from 1.3-μm and 1.5-μm InGaAsP/InP Lasers : Evidence for Excitations in Split-Off Valence Band
• Saturable Inter-Valence-Band Absorptions in 1.3μm-InGaAsP Lasers : B-4: LD AND LED-2
• Generation Mechanisms of Current-Injection-Induced Acoustic (CIA) Signals in Semiconductor Lasers : Photo-Acoustic Spectroscopy
• Hole-Burnings Observed at High Energy Tails in Spontaneous Emission Spectra from 1.3 μm-InGaAsP/InP Lasers
• Analysis of Intrinsic Saturable Absorption in InGaAsP/InP Diode Lasers
• Investigation of 1.3-μm InGaAsP/InP Lasers by the Measurement of Current-Injection-Induced Acoustic (CIA) Signals
• Observation of Acoustic Signals from Semiconductor Lasers
• Note on Phonon Spectroscopy with Acoustoelectric Domain and Brillouin-Scattering Technique
• Contribution of the Imaginary Part of Photoelastic Constants to Resonant Brillouin Scattering in CdS
• Photoacoustic Measurement of Non-radiative States and Defects in CdS and Si with ZnO Transducer
• Note on the Selection Rule of Resonant Brillouin Scattering in CdS at Room Temperature
• (Invited) GaAs Acoustic Distributed Feedback Lasers : B-4: LASERS (1)
• Frequency Dependence of Lattice Attenuation of Ultrasonic Waves in CdS
• SAW Convolver Utilizing Sezawa Wave in a Monolithic ZnO/Si Configuration : Communication Devices and Materials
• Tunable Surface-Acoustic-Wave Generator on a Monolithic MIS Structure : C-5: ACOUSTIC DEVICES
• Epitaxial Growth of Aluminum Nitride on Sapphire Using Metalorganic Chemical Vapor Deposition
• Scanning Force/Tunneling Microscopy as a Novel Technique for the Study of Nanometer-Scale Dielectric Breakdown of Silicon Oxide Layer
• Optical Absorption and Cathodoluminescence of Epitaxial Aluminum Nitride Films
• Electronic Conduction in Epitaxial Aluminum Nitride Films on Silicon
• Effect of Potentiostatic Control on in situ STM Images of Ag and Au Electrodes in a 0.1 M KCl Solution

もっと見る 閉じる

スポンサーリンク