Oxide Growth of Tin Films by Modified rf Plasma Oxidation Method
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1980-08-05
著者
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Mikoshiba Nobuo
Research Institute Of Electrical Communication Tohoku University:(present Address) Hewlett-packard L
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Mikoshiba Nobuo
Research Institute Of Electrical Communication Tohoku University
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MORITA Seizo
Research Institute of Electrical Communication, Tohoku University
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Morita Seizo
Research Institute Of Electrical Communication Tohoku University
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Yokoyama Osamu
Research Institute Of Electrical Communication Tohoku University
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TAKAHASHI NOBUYUKI
Research & Development Division, Taiko Refractories Co., Ltd.
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Takahashi Nobuyuki
Research Institute Of Electrical Communication Tohoku University
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Mikoshiba Nobuo
Research Institute Of Electorical Communication Tohoku University
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