Peak Shifts ot the Photo-Induced Magnetophonon Resonance in n-InSb at 4.2 K
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概要
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We have investigated the transverse photoconductance in n-InSb in magneticfields up to 30 kG at 4.2 K. A small number of hot electrons were excited byweak irradiation of white light without raising the average temperature of conduc-tion electrons. We observed magnetophonon oscillations in the photoconductancein the samples with carrier concentrations from n=1.4 x 10" cm ' to n=2.0 x10" cm '. We found that the resonance minima of the oscillations due to theenergy relaxation of the photo-excited electrons appear at higher magnetic fieldswith the increase of carrier concentrations. These shifts are interpreted as theeffect of the Fermi energy due to the degeneracy of conduction electrons and aresimilar to the Burstein-Moss effect in the shifts of the optical absorption edgein heavily doped o-InSb.
- 社団法人日本物理学会の論文
- 1978-08-15
著者
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NOGUCHI Takashi
Research and Development Dept., Semiconductor Group, SONY
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Mikoshiba N
Research Institute Of Electrical Communication Tohoku University:(present Address) Hewlett-packard L
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Mikoshiba Nobuo
Research Institute Of Electrical Communication Tohoku University
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Morita Seizo
Research Institute Of Electrical Communication Tohoku University
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Noguchi Takashi
Research Institute Of Electrical Communication Tohoku University
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Mikoshiba Nobuo
Research Institute Of Electorical Communication Tohoku University
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Noguchi Takashi
Research And Development Dept. Semiconductor Group Sony
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